Siemens BFG235 Datasheet
BFG 235
NPN Silicon RF Transistor
• For low-distortion broadband output amplifier
stages in antenna and telecommunications
systems up to 2 GHz at collector currents from
120mA to 250mA
• Power amplifiers for DECT and PCN systems
• Integrated emitter ballast resistor
•
f
= 5.5 GHz
T
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFG 235 BFG235 Q62702-F1432 1 = E 2 = B 3 = E 4 = C SOT-223
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
≤ 80 °C
S
Junction temperature
Ambient temperature
Storage temperature
V
V
V
V
I
I
P
T
T
T
C
B
CEO
CES
CBO
EBO
tot
j
A
stg
15 V
25
25
2
300 mA
40
mW
2000
150 °C
- 65 ... + 150
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤
35 K/W
1)
T
is measured on the collector lead at the soldering point to the pcb.
S
Semiconductor Group 1 Dec-13-1996
BFG 235
Electrical Characteristics at
T
= 25°C, unless otherwise specified.
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 1 mA,
C
I
B
= 0
Collector-emitter cutoff current
V
= 25 V,
CE
V
BE
= 0
Collector-base cutoff current
V
= 10 V,
CB
I
E
= 0
Emitter-base cutoff current
V
= 1 V,
EB
I
C
= 0
DC current gain
I
= 200 mA,
C
V
CE
= 5 V
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
V
15 - -
µA
- - 200
nA
- - 100
µA
- - 2
-
50 120 250
Semiconductor Group 2 Dec-13-1996
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