Siemens BFG19S Datasheet
BFG 19S
NPN Silicon RF Transistor
• For low noise, low distortion broadband
amplifiers in antenna and
telecommunications systems up to 1.5GHz
at collector currents from 10 mA to 70 mA
• CECC-type available: CECC 50 002/259
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFG 19S BFG19S Q62702-F1359 1 = E 2 = B 3 = E 4 = C SOT-223
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
≤ 75 °C
S
Junction temperature
Ambient temperature
Storage temperature
V
V
V
V
I
I
P
T
T
T
C
B
CEO
CES
CBO
EBO
tot
j
A
stg
15 V
20
20
3
100 mA
12
W
1
150 °C
- 65 ... + 150
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 75 K/W
1)
T
is measured on the collector lead at the soldering point to the pcb.
S
Semiconductor Group 1 Dec-13-1996
BFG 19S
Electrical Characteristics at
T
= 25°C, unless otherwise specified.
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 1 mA,
C
I
B
= 0
Collector-emitter cutoff current
V
= 20 V,
CE
V
BE
= 0
Collector-base cutoff current
V
= 10 V,
CB
I
E
= 0
Emitter-base cutoff current
V
= 2 V,
EB
I
C
= 0
DC current gain
I
= 70 mA,
C
V
CE
= 8 V
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
V
15 - -
µA
- - 100
nA
- - 100
µA
- - 10
-
40 100 220
Semiconductor Group 2 Dec-13-1996
Loading...