Siemens BF999 Datasheet
Silicon N Channel MOSFET Triode BF 999
● For high-frequency stages up to 300 MHz,
preferably in FM applications
Type Marking
Ordering Code
(tape and reel)
BF 999 Q62702-F1132LB SOT-23
Pin Configuration
1 2 3
G D S
Package
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage V
DS 20 V
mADrain current ID 30
Gate-source peak current
± IGSM 10
Total power dissipation, TA ≤ 60 ˚C Ptot 200 mW
Storage temperature range T
Channel temperature T
stg – 55 … + 150 ˚C
ch 150
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 450 K/W
1)
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm× 16.7 mm × 0.7 mm.
Semiconductor Group 1
07.94
Electrical Characteristics
I
A = 25 ˚C, unless otherwise specified.
at T
BF 999
Parameter Symbol
UnitValues
min. typ. max.
DC Characteristics
V
(BR) DS 20 – –
D = 10 µA, – VGS = 4 V
Gate-source breakdown voltage
± IGS = 10 mA, VDS = 0
± VGS = 5 V, VDS = 0
DS = 10 V, VGS = 0
V
DS = 10 V, ID = 20 µA
V
AC Characteristics
DS = 10 V, ID = 10 mA, f = 1 kHz
V
± V(BR) GSS 6.5 – 12
± IGSS ––50
I
DSS 5–18
– V
GS (p) – – 2.5
g
fs 14 16 –
VDrain-source breakdown voltage
nAGate-source leakage current
mADrain current
VGate-source pinch-off voltage
mSForward transconductance
DS = 10 V, ID = 10 mA, f = 1 MHz
V
DS = 10 V, ID = 10 mA, f = 1 MHz
V
VDS = 10 V, ID = 10 mA, f = 1 MHz
(test circuit)
DS = 10 V, ID = 10 mA, f = 200 MHz,
V
G = 2 mS, GL = 0.5 mS
G
Noise figure (test circuit)
DS = 10 V, ID = 10 mA, f = 200 MHz,
V
G = 2 mS, GL = 0.5 mS
G
C
gss – 2.5 –
C
dg –25–
C
dss –1–
Gp –25–
F –1–
pFGate input capacitance
fFReverse transfer capacitance
pFOutput capacitance
dBPower gain
Semiconductor Group 2
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