Siemens BF997 Datasheet

Silicon N Channel MOSFET Tetrode BF 997

● Integrated suppression network against

spurious VHF oscillations

● For VHF applications, especially in TV

tuners with extended VHF band,
e. g. in CATV tuners

Type Marking

Ordering Code
(tape and reel)

BF 997 Q62702-F1055MK SOT-143

Pin Configuration

1 2 3 4

S D G2 G1

Package

Maximum Ratings
Parameter Symbol Values Unit

Drain-source voltage V

DS 20 V

mADrain current ID 30

Gate 1/gate 2 peak source current

± IG1/2SM 10

Total power dissipation, TS < 76 ˚C Ptot 200 mW
Storage temperature range T

stg – 55 … + 150 ˚C

Channel temperature Tch 150

Thermal Resistance

th JS < 370 K/W

Junction - soldering point

R

1)

1)

For detailed information see chapter Package Outlines..

Semiconductor Group 1

07.94

Electrical Characteristics

A = 25 ˚C, unless otherwise specified.

at T

BF 997

BF 997

Parameter Symbol

DC Characteristics

V

(BR) DS 20 – –

D = 10 µA, – VG1S = – VG2S = 4 V

I

Gate 1 source breakdown voltage

± IG1S = 10 mA, VG2S = VDS = 0

Gate 2 source breakdown voltage

± IG2S = 10 mA, VG1S = VDS = 0

± VG1S = 5 V, VG2S = VDS = 0

Gate 2 source leakage current

± VG2S = 5 V, VG1S = VDS = 0

DS = 15 V, VG1S = 0, VG2S = 4 V

V

DS = 15 V, VG2S = 4 V, ID = 20 µA

V

± V(BR) G1SS 8.5 – 14

± V(BR) G2SS 8.5 – 14

± IG1SS ––50

± IG2SS ––50

I

DSS 2–20

– V

G1S (p) – – 2.5

UnitValues

min. typ. max.

VDrain-source breakdown voltage

nAGate 1 source leakage current

mADrain current

VGate 1 source pinch-off voltage

Gate 2 source pinch-off voltage

DS = 15 V, VG1S = 0, ID = 20 µA

V

– V

G2S (p) – – 2.0

Semiconductor Group 2

Electrical Characteristics

A = 25 ˚C, unless otherwise specified.

at T

BF 997

BF 997

Parameter Symbol

AC Characteristics

g

fs 15 18 –

DS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 kHz

V

C

g1ss – 2.5 –

DS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz

V

C

Gate 2 input capacitance

DS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz

V

DS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz

V

DS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz

V

DS = 15 V, ID = 10 mA

V

f = 200 MHz, G

G = 2 mS, GL = 0.5 mS

g2ss – 1.2 –

C

dg1 –25–

C

dss –1–

ps –25–

G

(test circuit)

UnitValues

min. typ. max.

mSForward transconductance

pFGate 1 input capacitance

fFFeedback capacitance

pFOutput capacitance

dBPower gain

Noise figure

DS = 15 V, ID = 10 mA

V

f = 200 MHz, G

G = 2 mS, GL = 0.5 mS

(test circuit)
Gain control range

DS = 15 V, VG2S = 4 … – 2 V, f = 200 MHz

V

(test circuit)

F –1–

∆Gps 50 – –

Semiconductor Group 3