Siemens BF996S Datasheet
Silicon N Channel MOSFET Tetrode BF 996 S
● For input stages in UHF TV tuners
● High transconductance
● Low noise figure
Type Marking
Ordering Code
(tape and reel)
BF 996 S Q62702-F1021MH SOT-143
Pin Configuration
1 2 3 4
S D G2 G1
Package
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage V
DS 20 V
mADrain current ID 30
Gate 1/gate 2 peak source current
± IG1/2SM 10
Total power dissipation, TA < 76 ˚C Ptot 200 mW
Storage temperature range T
stg – 55 … + 150 ˚C
Channel temperature Tch 150
Thermal Resistance
Junction - soldering point Rth JS < 370 K/W
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
07.94
Electrical Characteristics
A = 25 ˚C, unless otherwise specified.
at T
DC Characteristics
BF 996 S
UnitValuesParameter Symbol
min. typ. max.
D = 10 µA, – VG1S = – VG2S = 4 V
I
Gate 1 source breakdown voltage
± IG1S = 10 mA, VG2S = VDS = 0
Gate 2 source breakdown voltage
± IG2S = 10 mA, VG1S = VDS = 0
± VG1S = 5 V, VG2S = VDS = 0
Gate 2 source leakage current
± VG2S = 5 V, VG1S = VDS = 0
DS = 15 V, VG1S = 0, VG2S = 4 V
V
DS = 15 V, VG2S = 4 V, ID = 20 µA
V
Gate 2 source pinch-off voltage
DS = 15 V, VG1S = 0, ID = 20 µA
V
V
(BR) DS 20 – –
± V(BR) G1SS 8.5 – 14
± V(BR) G2SS 8.5 – 14
± IG1SS ––50
± IG2SS ––50
I
DSS 2–20
– V
G1S (p) – – 2.5
– V
G2S (p) – – 2.0
VDrain-source breakdown voltage
nAGate 1 source leakage current
mADrain current
VGate 1 source pinch-off voltage
Semiconductor Group 2
Electrical Characteristics
A = 25 ˚C, unless otherwise specified.
at T
BF 996 S
Parameter Symbol
AC Characteristics
g
fs 15 18 –
DS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 kHz
V
C
g1ss – 2.3 –
DS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz
V
C
Gate 2 input capacitance
DS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz
V
DS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz
V
DS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz
V
DS = 15 V, ID = 10 mA
V
f = 200 MHz, G
G = 2 mS, GL = 0.5 mS
g2ss – 1.1 –
C
dg1 –25–
C
dss – 0.8 –
ps –25–
G
(test circuit 1)
UnitValues
min. typ. max.
mSForward transconductance
pFGate 1 input capacitance
fFFeedback capacitance
pFOutput capacitance
dBPower gain
Power gain
DS = 15 V, ID = 10 mA
V
f = 800 MHz, G
G = 2.5 mS, GL = 0.8 mS
(test circuit 2)
Noise figure
DS = 15 V, ID = 10 mA
V
f = 200 MHz, G
G = 2 mS, GL = 0.5 mS
(test circuit 1)
Noise figure
DS = 15 V, ID = 10 mA
V
f = 800 MHz, G
G = 2.5 mS, GL = 0.8 mS
(test circuit 2)
Gain control range
DS = 15 V, VG2S = 4 … – 2 V, f = 800 MHz
V
(test circuit 2)
ps –18–
G
F –1–
F – 1.8 –
∆Gps 40 – –
Semiconductor Group 3
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