Siemens BF994S Datasheet
Silicon N Channel MOSFET Tetrode BF 994 S
● For VHF applications, especially for input
and mixer stages with a wide tuning
range, e.g. in CATV tuners
Type Marking
Ordering Code
(tape and reel)
BF 994 S Q62702-F1020MG SOT-143
Pin Configuration
1 2 3 4
S D G2 G1
Package
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage V
DS 20 V
mADrain current ID 30
Gate 1/gate 2 peak source current
± IG1/2SM 10
Total power dissipation, TS < 76 ˚C Ptot 200 mW
Storage temperature range T
stg – 55 … + 150 ˚C
Channel temperature< Tch 150
Thermal Resistance
Junction - soldering point Rth Js < 370 K/W
1)
1)
For detailed information see chapter Package Outlines.
Electrical Characteristics
A = 25 ˚C, unless otherwise specified.
at T
DC Characteristics
BF 994 S
BF 994 S
min. typ. max.
UnitValuesParameter Symbol
D = 10 µA, – VG1S = – VG2S = 4 V
I
Gate 1 source breakdown voltage
± IG1S = 10 mA, VG2S = VDS = 0
Gate 2 source breakdown voltage
± IG2S = 10 mA, VG1S = VDS = 0
± VG1S = 5 V, VG2S = VDS = 0
Gate 2 source leakage current
± VG2S = 5 V, VG1S = VDS = 0
DS = 15 V, VG1S = 0, VG2S = 4 V
V
DS = 15 V, VG2S = 4 V, ID = 20 µA
V
Gate 2 source pinch-off voltage
DS = 15 V, VG1S = 0, ID = 20 µA
V
V
(BR) DS 20 – –
± V(BR) G1SS 8.5 – 14
± V(BR) G2SS 8.5 – 14
± IG1SS ––50
± IG2SS ––50
I
DSS 2–20
– V
G1S (p) – – 2.5
– V
G2S (p) – – 2.0
VDrain-source breakdown voltage
nAGate 1 source leakage current
mADrain current
VGate 1 source pinch-off voltage
Electrical Characteristics
A = 25 ˚C, unless otherwise specified.
at T
AC Characteristics
BF 994 S
BF 994 S
min. typ. max.
UnitValuesParameter Symbol
DS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 kHz
V
DS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz
V
Gate 2 input capacitance
DS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz
V
DS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz
V
DS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz
V
DS = 15 V, ID = 10 mA
V
f = 200 MHz, G
G = 2 mS, GL = 0.5 mS
(test circuit)
Noise figure
DS = 15 V, ID = 10 mA
V
f = 200 MHz, G
G = 2 mS, GL = 0.5 mS
(test circuit)
Gain control range
DS = 15 V, VG2S = 4 … – 2 V, f = 200 MHz
V
(test circuit)
g
fs 15 18 –
C
g1ss – 2.5 –
C
g2ss – 1.2 –
C
dg1 –25–
C
dss –1–
ps –25–
G
F –1–
∆Gps 50 – –
mSForward transconductance
pFGate 1 input capacitance
fFFeedback capacitance
pFOutput capacitance
dBPower gain
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