Siemens BF959 Datasheet

NPN Silicon RF Transistor BF 959

● For SAW filter driver applications

in TV tuners

● For linear broadband VHF amplifier

stages

● For oscillator applications

Type Marking

Ordering Code

Pin Configuration

Package

1 2 3

BF 959 Q62702-F640– TO-92

C E B

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage V

CE0 20 V

Collector-emitter reverse voltage VCES 30
Collector-base voltage VCB0 30
Emitter-base voltage V
Peak collector current ICM 100
Peak base current I
Total power dissipation, TA ≤ 25 ˚C

CE ≤ 15 V

V

Junction temperature T
Storage temperature range T

EB0 3

BM 30

P

tot 500 mW

j 150 ˚C
stg – 55 … + 150

mA

1)

Thermal Resistance

Junction - ambient Rth JA ≤ 250 K/W

1)

For detailed information see chapter Package Outlines.

Semiconductor Group 1

Electrical Characteristics

A = 25 ˚C, unless otherwise specified.

at T

BF 959

BF 959

Parameter Symbol

DC Characteristics

V

(BR) CE0 20 – –

C = 1 mA

I

Collector-base breakdown voltage

C = 10 µA

I

Emitter-base breakdown voltage

E = 10 µA

I

V

(BR) CB0 30 – –

V

(BR) EB0 3––

I

CB0 – – 100

V = 20 V

CE = 10 V

C = 5 mA

I

C = 20 mA

I

C = 20 mA, VCE = 10 V

I

Collector-emitter saturation voltage

C = 30 mA, IB = 2 mA

I

FE

h

V

BE – 0.75 –

V

CE sat ––1

min. typ. max.

35
40

–
85

–
–

UnitValues

VCollector-emitter breakdown voltage

nACollector cutoff current

–DC current gain, V

VBase-emitter voltage

Base-emitter saturation voltage

C = 30 mA, IB = 2 mA

I

AC Characteristics

C = 20 mA, VCE = 10 V, f = 100 MHz

I

C = 30 mA, VCE = 5 V

I

CB = 10 V, IE = 0, f = 1 MHz

V

Collector-base capacitance

V

CE = 10 V, VBE = 0, f = 1 MHz

CE = 10 V, f = 200 MHz, RS = 60 Ω

V

C = 5 mA

I

C = 20 mA

I

C = 20 mA, VCE = 10 V, f = 35 MHz

I

V

BE sat – – 0.95

T

f

700
600

C

obo – 0.9 –

C

cb – 0.75 –

1100––

–

F

–
–

g

22e – 0.06 –

3
4

–
–

MHzTransition frequency

pFOutput capacitance

dBNoise figure

mSOutput conductance

Semiconductor Group 2