Siemens BF841, BF840 Datasheet

NPN Silicon RF Transistors BF 840

BF 841

● Suitable for common emitter RF, IF amplifiers

● Low collector-base

capacitance due to contact shield diffusion

● Low output conductance

Type Ordering CodeMarking

Pin Configuration

Package

1 2 3

BF 840 Q62702-F1240NC SOT-23

B E C

BF 841 Q62702-F1287ND

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage V

CE0 40 V

Collector-base voltage VCB0 40
Emitter-base voltage V

EB0 4

Collector current IC 25 mA
Base current IB 2
Total power dissipation, TA ≤ 25 ˚C

2)

Junction temperature T
Storage temperature range T

Ptot 280 mW

j 150 ˚C
stg – 65 … + 150

1)

Thermal Resistance

Junction - ambient

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on alumina 15 mm× 16.7 mm × 0.7 mm.

Semiconductor Group 1

2) Rth JA ≤ 450 K/W

07.94

Electrical Characteristics

I

I

I

I

I
R

I

A = 25 ˚C, unless otherwise specified.

at T

BF 840

BF 840

BF 841

Parameter Symbol

DC Characteristics

V

(BR) CE0 40 – –

C = 1 mA, IB = 0

Emitter-base breakdown voltage

E = 10 µA, IB = 0

CB = 20 V, IE = 0

V

C = 1 mA, VCE = 10 V

V

(BR) EB0 4––

I

CB0 – – 100

FE

h

BF 840
BF 841

V

BE – 0.7 –

C = 1 mA, VCE = 10 V

AC Characteristics

min. typ. max.

65
35

–
–

220
125

UnitValues

VCollector-emitter breakdown voltage

nACollector-base cutoff current

–DC current gain, I

VBase-emitter voltage

f

T – 380 –

C = 1 mA, VCE = 10 V, f = 100 MHz

C

CB = 10 V, VBE = vbe = 0, f = 1 MHz

V

cb – 0.3 –

F – 1.7 –

C = 1 mA, VCE = 10 V, f = 100 kHz

S = 200 Ω

C = 1 mA, VCE = 10 V, f = 0.5 MHz

g

22e –4–

MHzTransition frequency

pFCollector-base capacitance

dBNoise figure

µSOutput conductance

Semiconductor Group 2