BF 799W
NPN Silicon RF Transistor
• For linear broadband amplifier applications
up to 500MHz
• SAW filter driver in TV tuners
Type Marking Ordering Code Pin Configuration Package
BF 799W LKs Q62702-F1571 1 = B 2 = E 3 = C SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
≤ 107 °C
S
Junction temperature
Storage temperature
V
V
V
V
I
I
P
T
T
C
B
CEO
CES
CBO
EBO
tot
j
stg
20 V
30
30
3
35 mA
10
mW
280
150 °C
- 65 ... - 150
Thermal Resistance
Junction - soldering point
R
thJS
≤
155 K/W
Semiconductor Group 1 Nov-28-1996
BF 799W
Electrical Characteristics at
T
= 25°C, unless otherwise specified.
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 1 mA,
C
I
B
= 0
Collector-base breakdown voltage
I
= 10 µA,
C
I
E
= 0
Base-emitter breakdown voltage
I
= 10 µA,
E
I
C
= 0
Collector-base cutoff current
V
= 20 V,
CB
I
E
= 0
DC current gain
I
= 5 mA,
C
I
= 20 mA,
C
V
CE
V
= 10 V
= 10 V
CE
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
20 - -
30 - -
3 - -
- - 100
35
40
95
100
250
V
nA
-
Collector-emitter saturation voltage
I
= 20 mA,
C
I
= 2 mA
B
Base-emitter saturation voltage
I
= 20 mA,
C
I
= 2 mA
B
V
CEsat
V
BEsat
V
- 0.15 0.5
- - 0.95
Semiconductor Group 2 Nov-28-1996