Siemens BF799W Datasheet

BF 799W
NPN Silicon RF Transistor
• For linear broadband amplifier applications up to 500MHz
• SAW filter driver in TV tuners
Type Marking Ordering Code Pin Configuration Package
BF 799W LKs Q62702-F1571 1 = B 2 = E 3 = C SOT-323
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation
T
107 °C
S
Junction temperature Storage temperature
V V V V I I P
T T
C B
CEO CES CBO EBO
tot
j stg
20 V 30 30
3 35 mA 10
mW 280 150 °C
- 65 ... - 150
Thermal Resistance
Junction - soldering point
R
thJS
155 K/W
Semiconductor Group 1 Nov-28-1996
BF 799W
Electrical Characteristics at
T
= 25°C, unless otherwise specified.
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 1 mA,
C
I
B
= 0
Collector-base breakdown voltage
I
= 10 µA,
C
I
E
= 0
Base-emitter breakdown voltage
I
= 10 µA,
E
I
C
= 0
Collector-base cutoff current
V
= 20 V,
CB
I
E
= 0
DC current gain
I
= 5 mA,
C
I
= 20 mA,
C
V
CE
V
= 10 V
= 10 V
CE
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
20 - -
30 - -
3 - -
- - 100
35 40
95 100
­ 250
V
nA
-
Collector-emitter saturation voltage
I
= 20 mA,
C
I
= 2 mA
B
Base-emitter saturation voltage
I
= 20 mA,
C
I
= 2 mA
B
V
CEsat
V
BEsat
V
- 0.15 0.5
- - 0.95
Semiconductor Group 2 Nov-28-1996
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