Siemens BCR135 Datasheet

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BCR 135

NPN Silicon Digital Transistor

• Switching circuit, inverter, interface circuit,
driver circuit

• Built in bias resistor (

R

=10kΩ,

1

R

=47kΩ)

2

Type Marking Ordering Code PackagePin Configuration

1 = B 2 = E 3 = C

Maximum Ratings
Parameter

Collector-emitter voltage
Collector-base voltage
Emitter-base voltage 6
Input on Voltage
DC collector current
Total power dissipation,

T

= 102 °C

S

Junction temperature

Symbol Value Unit

V

CEO

V
V
V
I

C

P
T
T

CBO
EBO
i(on)

tot
j
stg

50

20

100 mA

150 °C

65...+150Storage temperature

SOT-23BCR 135 WJs Q62702-C2257

V50

mW200

Thermal Resistance

Junction ambient

1)

Junction - soldering point

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2Cu

Semiconductor Group

R
R

thJA
thJS

≤ 350 K/W
≤ 240

n-18-19971

BCR 135

Ju

Electrical Characteristics at

T

=25°C, unless otherwise specified

A

Parameter

DC Characteristics

Collector-emitter breakdown voltage

I

= 100 µA,

C

I

B

= 0

Collector-base breakdown voltage

I

= 10 µA,

C

V

= 40 V,

CB

I

B

= 0

I

E

= 0

Emitter cutoff current

V

= 6 V,

EB

I

= 5 mA,

C

I

= 10 mA,

C

I

= 0

C

V

= 5 V

CE

I

= 0.5 mA

B

Symbol Values Unit

min. typ. max.

V

(BR)CEO

V

(BR)CBO

I

CBO

I

EBO

h

FE

V

CEsat

50 -

- - nACollector cutoff current

- - µA167

70

-Collector-emitter saturation voltage1)

- - V50

-

100

- - -DC current gain 1)

- 0.3 V

I

= 100 µA,

C

I

= 2 mA,

C

V

V

CE

= 5 V

CE

= 0.3 V
Input resistor
Resistor ratio

AC Characteristics

I

= 10 mA,

C

V

= 10 V, f = 1 MHz

CB

V

= 5 V, f = 100 MHz

CE

V

V

R
R

f

C

T

i(off)

i(on)

1

/

R

1

cb

0.5 -Input off voltage

0.5 -Input on Voltage

1

1.4

7 10 kΩ13

2

0.19

0.21 0.24

-

- - MHz150Transition frequency

- 3 pFCollector-base capacitance

-

1) Pulse test: t < 300µs; D < 2%

Semiconductor Group

n-18-19972