BB 914
Silicon Variable Capacitance Diode
• For FM radio tuner with extended frequency band
• High tuning ratio low supply voltage (car radio)
• Monolitic chip (common cathode) for perfect
dual diode tracking
• Good linearity of C-V curve
• High figure of merit
Type Marking Ordering Code Pin Configuration Package
BB 914 SMs Q62702-B673 1 = A1 2 = A2 3=C1/2 SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
Peak reverse voltage
Forward current,
T
≤ 60°C
A
Operating temperature range
Storage temperature
V
V
I
T
T
F
R
RM
op
stg
18 V
20
50 mA
- 55 ... + 125 °C
- 55 ... + 150
Thermal Resistance
Junction - ambient
R
thJA
≤
600 K/W
Semiconductor Group 1 Oct-10-1996
BB 914
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
= 16 V,
R
V
= 16 V,
R
T
= 25 °C
A
T
= 60 °C
A
I
R
-
-
-
-
20
200
nA
AC characteristics
Diode capacitance
V
= 2 V, f = 1 MHz
R
V
= 8 V, f = 1 MHz
R
Capacitance ratio
V
= 2 V,
R
V
= 8 V, f = 1 MHz
R
Capacitance matching 2)
V
= 2 V,
R
V
= 8 V, f = 1 MHz
R
C
C
∆
T
T2
C
pF
42.5
17.6
/
C
T8
43.75
18.7
45
19.75
-
2.28 2.34 2.42
/
C
T
T
%
- - 1.5
Series resistance
C
= 38 pF, f = 100 MHz
T
r
s
Ω
- 0.28 -
Semiconductor Group 2 Oct-10-1996