Siemens BB857 Datasheet
BB 857
Semiconductor Group
Mar-27-19981
Silicon Tuning Diode
• For SAT-indoor-units
• High capacitance ratio
• Low series inductance
• Low series resistance
• Extremely small plastic SMD package
• Excellent uniformity and matching due to
"in-line" matching assembly procedure
1
VES05991
2
Type Marking Ordering Code
Pin Configuration
Package
BB 857
BB 857
O
O
Q62702-B0897 unmatched
Q62702-B0893 inline matched
1 = C 2 = A SCD-80
Maximum Ratings
Parameter
Symbol Value Unit
Diode reverse voltage
V
R
30 V
Peak reverse voltage (R ≥ 5kΩ)
V
RM
35
Forward current
I
F
20 mA
Operating temperature range
T
op
-55 ...+150 °C
Storage temperature
T
stg
-55 ...+150
Semiconductor Group 1 1998-11-01
BB 857
Semiconductor Group
Mar-27-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
R
= 30 V
I
R
- - 10
nA
Reverse current
V
R
= 30 V,
T
A
= 85 °C
I
R
- - 200
AC characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 25 V, f = 1 MHz
V
R
= 28 V, f = 1 MHz
C
T
6
-
0.45
6.6
0.55
0.54
7.2
-
0.65
pF
12 -
C
apacitance ratio
V
R
= 1 V,
V
R
= 25 V, f = 1 MHz
C
T1
/
C
T25
- -
12.2 -9.7
C
T1
/
C
T28
Capacitance ratio
V
R
= 1 V,
V
R
= 28 V, f = 1 MHz
Capacitance ratio 1)
V
R
= 1 V,
V
R
= 28 V, f = 1 MHz
∆
C
T
/
C
T
- - 5 %
Series resistance
V
R
= 5 V, f = 470 MHz
r
s
- 1.5 -
Ω
Series inductance
L
s
0.6 nH--
1) In-line matching. For details please refer to Application Note 047
Semiconductor Group 2 1998-11-01
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