Siemens BB 835 Technical data
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Silicon Tuning Diode
Preliminary data
Features
● Extended frequency range up to 2.8 Ghz ;
special design for use in TV-sat indoor units
● High capacitance ratio
BB 835
Type Marking Ordering Code
(tape and reel)
Pin Configuration Package
12
BB 835 yellow X Q62702-B802 C A SOD-323
Maximum Ratings
Parameter Symbol Values Unit
Reverse voltage
Reverse voltage (
R ≥ 5kΩ)
Forward current
Operating temperature range
Storage temperature range
V
V
I
T
T
R
RM
F
OP
stg
30 V
35 V
20 mA
– 55… +150 °C
– 55… +150 °C
Thermal Resistance
Junction - ambient
1)
R
th JA
≤ 450 K/W
1)
For detailed informatioon see chapter Package Outline
Semiconductor Group 1 04.96
BB 835
Electrical Characteristics
at
T
= 25 °C, unless otherwise specified.
A
Parameter Symbol Value Unit
min. typ. max.
DC Characteristics
Reverse current
V
= 30 V
R
V
= 30 V, TA = 85 °C
R
Diode capacitance
V
= 1 V, f = 1 MHz
R
V
= 28 V, f = 1 MHz
R
Capacitance ratio
V
= 1 V, 28 V, f = 1 MHz
R
Capacitance matching
V
= 1…28 V, f = 1 MHz
R
Series resistance
V
= 1 V, f = 470 MHz
R
Series inductance
Diode capacitance CT = f (VR)
f = 1 MHz.
I
R
C
T
CT1/C
∆CT/C
r
S
L
S
–
–
8.5
0.5
T28
–
–
10
200
9.1
0.62100.75
13.5 14.7 –
T
––3
– 2.4 –
– 1.4 – nH
nA
pF
–
%
Ω
Semiconductor Group 2
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