Siemens BB835 Datasheet
Semiconductor Group 1 04.96
Type Marking Ordering Code
(tape and reel)
Pin Configuration Package
12
BB 835 yellow X Q62702-B802 C A SOD-323
Maximum Ratings
Parameter Symbol Values Unit
Reverse voltage
V
R
30 V
Reverse voltage (
R ≥ 5kΩ)
V
RM
35 V
Forward current
I
F
20 mA
Operating temperature range
T
OP
– 55… +150 °C
Storage temperature range
T
stg
– 55… +150 °C
Thermal Resistance
Junction - ambient
1)
R
th JA
≤ 450 K/W
1)
For detailed informatioon see chapter Package Outline
Silicon Tuning Diode
Preliminary data
BB 835
Features
● Extended frequency range up to 2.8 Ghz ;
special design for use in TV-sat indoor units
● High capacitance ratio
BB 835
Semiconductor Group 2
Diode capacitance CT = f (VR)
f = 1 MHz.
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified.
Parameter Symbol Value Unit
min. typ. max.
DC Characteristics
Reverse current
V
R
= 30 V
V
R
= 30 V, TA = 85 °C
I
R
–
–
–
–
10
200
nA
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 28 V, f = 1 MHz
C
T
8.5
0.5
9.1
0.62100.75
pF
Capacitance ratio
V
R
= 1 V, 28 V, f = 1 MHz
CT1/C
T28
13.5 14.7 –
–
Capacitance matching
V
R
= 1…28 V, f = 1 MHz
∆CT/C
T
––3
%
Series resistance
V
R
= 1 V, f = 470 MHz
r
S
– 2.4 –
Ω
Series inductance
L
S
– 1.4 – nH
Loading...