Siemens BB833 Datasheet
Silicon Tuning Diode BB 833
Features
● Extented frequency range up to 2.5 GHz;
special design for use in TV-SAT indoor units
● High capacitance ratio
Type Ordering Code
(tape and reel)
BB 833 Q62702-B628 white X SOD-323
12
C A
Marking PackagePin Configuration
Maximum Ratings
Parameter Symbol Values Unit
Reverse voltage VR 30 V
VRMReverse voltage (R ≥ 5kΩ)35
Forward current IF 20 mA
Operating temperature range T
Storage temperature range T
op – 55 … + 150 ˚C
stg – 55 … + 150
Thermal Resistance
Junction - ambient R
th JA ≤ 450 K/W
Semiconductor Group 1 04.96
Electrical Characteristics
f
f
A = 25 ˚C, unless otherwise specified.
at T
BB 833
Parameter Symbol
Reverse current
R = 30 V
V
R = 30 V, TA = 85 ˚C
V
Diode capacitance
= 1 MHz,VR = 1 V
R = 28 V
V
Capacitance ratio
= 1 MHz, VR = 1 V, 28 V
Capacitance matching
f = 1 MHz, V
R = 1 V … 28 V
Series resistance
T = 9 pF, f = 470 MHz
C
min. typ.
R nA
I
–
–
T pF
C
8.5
0.6
C
T1
–
–
9.3
0.75
CT28
∆CT
CT
r
s Ω– 1.8 –
max.
20
500
10
0.9
Series inductance Ls nH–––
Diode capacitance C
T = f (VR)
f = 1 MHz
UnitValues
–11 12.4 –
%––3
Semiconductor Group 2
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