Siemens BB831 Datasheet
BB 831
Semiconductor Group
Aug-03-1998
1
stg
Silicon Variable Capacitance Diode
Preliminary data
• Frequency range up to 2 GHz
special design for use in TV-sat indoor units
Type Marking Ordering Code Pin Configuration Package
BB 831 white T Q62702-B592 1 = C 2 = A SOD-323
Maximum Ratings
Parameter ValueSymbol Unit
V
R
Peak reverse voltage (R ≥ 5kΩ) V
Operating temperature range -55 ...+125
RM
I
F
T
op
T
30Diode reverse voltage
35
20 mAForward current
-55 ...+150Storage temperature
V
°C
BB 831
Semiconductor Group
Aug-03-1998
2
s
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter ValuesSymbol Unit
typ. max.min.
DC characteristics
VR = 30 V
Reverse current
VR = 30 V, TA = 85 °C
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 28 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance matching
VR = 1 V, VR = 28 V, f = 1 MHz
Series resistance
VR = 1 V, f = 100 MHz
I
R
I
R
C
T
CT1/C
∆CT/C
r
s
L
T28
T
-
- -
7.8
0.85
7.8
-
- 1.8
-
500
8.8
1.02
9.8
1.2
8.6 -9.5
- 3 %-
nA20Reverse current
pF
-1
Ω
- nHSeries inductance
1) In-line matching. For details please refer to Application Note 047
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