Siemens BB811 Datasheet
BB 811
Silicon Variable Capacitance Diode BB 811
● Frequency range up to 2 GHz;
special design for use in TV-sat indoor units
Type Ordering Code
Marking
Pin Configuration
Package
(tape and reel)
BB 811 Q62702-B478white T SOD-123
Maximum Ratings
Parameter Symbol Values Unit
Reverse voltage V
R 30 V
Forward current, TA ≤ 60 ˚C IF 20 mA
Operating temperature range T
Storage temperature range T
op – 55 … + 125 ˚C
stg – 55 … + 150
Thermal Resistance
Junction - ambient R
th JA ≤ 450 K/W
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
07.94
Electrical Characteristics
A = 25 ˚C, unless otherwise specified.
at T
BB 811
Parameter Symbol
min. typ.
Reverse current
R = 30 V
V
R = 30 V, TA = 85 ˚C
V
Diode capacitance, f = 1 MHz
R = 1 V
V
R = 28 V
V
Capacitance ratio
f = 1 MHz, V
R = 1 V/28 V
Series resistance
f = 100 MHz, C
T = 9 pF
Case capacitance
R nA
I
–
–
T pF
C
7.8
0.85
C
T1
–
–
8.8
1.02
CT28
r
S Ω–1–
CC pF– 0.1 –
f = 1 MHz
Capacitance matching
f = 1 MHz, V
R = 0.5 … 28 V
∆CT
CT
Series inductance LS nH– 2.8 –
UnitValues
max.
20
500
9.8
1.2
–7.8 8.6 9.5
%––3
Diode capacitance CT = f (VR)
f = 1 MHz
Semiconductor Group 2
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