Siemens BB804 Datasheet
BB 804
Silicon Variable Capacitance Diode BB 804
● For FM tuners
● Monolithic chip with common cathode
for perfect tracking of both diodes
● Uniform "square law" characteristics
● Ideal Hifi tuning device when used
in low-distortion, back-to-back
configuration
Type Ordering Code
(tape and reel)
BB 804 Q62702-B372 SOT-23
Pin
Configuration
PackageMarking
SF (see
Characteristics
for marking of
capacitance
subgroups)
Maximum Ratings per Diode
Parameter Symbol Values Unit
Reverse voltage V
R 18 V
Peak reverse voltage VRM 20
Forward current, TA ≤ 60 ˚C IF 50 mA
Operating temperature T
Storage temperature range T
op 100 ˚C
stg – 65 … + 150
Thermal Resistance
Junction - ambient R
Semiconductor Group 1
th JA ≤ 600 K/W
10.94
Electrical Characteristics per Diode
A = 25 ˚C, unless otherwise specified.
at T
BB 804
Parameter Symbol
Reverse current
R = 16 V
V
R = 16 V, TA = 60 ˚C
V
Diode capacitance
R = 2 V, f = 1 MHz
V
Capacitance ratio
R = 2 V, 8 V, f = 1 MHz
V
Series resistance
R = 2 V, f = 100 MHz
V
Q factor
R = 2 V, f = 100 MHz
V
Temperature coefficient of
R nA
I
C
T pF42 – 47.5
C
T2
CT8
r
s Ω– 0.18 –
Q –– 200 –
C ppm/K– 330 –
TC
diode capacitance
R = 2 V, f = 1 MHz
V
Diode capacitance
1)
T pF
C
VR = 2 V, f = 1 MHz
Subgroups: 0
1
2
3
4
min. typ.
–
–
42
43
44
45
46
–
–
–
–
–
–
–
UnitValues
max.
20
200
–1.65 1.71 –
43.5
44.5
45.5
46.5
47.5
1)
The capacitance subgroup is marked by the subgroup number printed on the component and the package
label. A packaging unit (e.g. 8-mm tape) contains diodes of one subgroup only. Delivery of different
capacitance subgroups requires a special agreement.
Semiconductor Group 2
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