Siemens BB669 Datasheet
BB 669
Semiconductor Group
Jul-10-19981
Silicon Tuning Diode
Preliminary data
• For VHF 2-Band-hyperband-TV-tuners
• Very high capacitance ratio
• Low series resistance
• Extremely small plastic SMD package
• Excellent uniformity and matching due to
"in-line" matching assembly procedure
VPS05176
1
2
Type Marking Ordering Code Pin Configuration Package
BB 669 1 Q62702-B0839 1 = C 2 = A SOD-323
Maximum Ratings
Parameter
Symbol Value Unit
Diode reverse voltage V
V
R
30
V
RM
35Peak reverse voltage (R ≥ 5kΩ)
Forward current
I
F
20 mA
Operating temperature range
T
op
- 55 ...+150 °C
Storage temperature
T
stg
- 55 ...+150
Semiconductor Group 1 1998-11-01
BB 669
Semiconductor Group
Jul-10-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
R
= 30 V
I
R
- - 10 nA
Reverse current
V
R
= 30 V,
T
A
= 85 °C
I
R
- - 200
AC characteristics
pF
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 25 V, f = 1 MHz
V
R
= 28 V, f = 1 MHz
56.5
43.4
2.8
2.7
61.5
47.2
3
2.9
51
39.6
2.6
2.5
C
T
-Capacitance ratio
V
R
= 2 V,
V
R
= 25 V, f = 1 MHz
C
T2
/
C
T25
1715.514.5
C
T1
/
C
T28
Capacitance ratio
V
R
= 1 V,
V
R
= 28 V, f = 1 MHz
20.9 23.318
%
∆
C
T
/
C
T
-Capacitance ratio 1)
V
R
= 1 V,
V
R
= 28 V, f = 1 MHz
- 2
Ω
Series resistance
V
R
= 8 V, f = 470 MHz
0.85 --
r
s
nHSeries inductance
L
s
- 1.4 -
1) In-line matching. For details please refer to Application Note 047
Semiconductor Group 2 1998-11-01
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