Siemens BB664 Datasheet
BB 664
Semiconductor Group
Jul-10-19981
Silicon Variable Capacitance Diode
Preliminary data
• For VHF TV-tuners
• High capacitance ratio
• Low series inductance
• Low series resistance
• Extremely small plastic SMD package
• Excellent uniformity and matching due to
"in-line" matching assembly procedure
1
VES05991
2
Type Marking Ordering Code PackagePin Configuration
4
4
Q62702- B0909 (unmatched)
Q62702- B0908 (in-lined matched)
1=C 2=A SCD-80BB 664
BB 664
Maximum Ratings
Parameter
Symbol UnitValue
Diode reverse voltage
V
R
30 V
Peak reverse voltage (R ≥ 5kΩ)
V
RM
35
Forward current
I
F
20 mA
Operating temperature range
T
op
-55.. ...+125 °C
Storage temperature
T
stg
-55... ...+150
Semiconductor Group 1 1998-11-01
BB 664
Semiconductor Group
Jul-10-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
R
= 30 V
I
R
- - 10 nA
Reverse current
V
R
= 30 V,
T
A
= 85 °C
I
R
- - 100
AC characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 25 V, f = 1 MHz
V
R
= 28 V, f = 1 MHz
C
T
39
29.4
2.5
2.4
41.8
31.85
2.7
2.55
44.5
34.2
2.85
2.75
pF
Capacitance ratio
V
R
= 2 V,
V
R
= 25 V, f = 1 MHz
C
T2
/
C
T25
11 11.8 12.5 -
Capacitance ratio
V
R
= 1 V,
V
R
= 28 V, f = 1 MHz
C
T1
/
C
T28
15.2 16.4 17.5
Capacitance ratio 1)
V
R
= 1 V,
V
R
= 28 V, f = 1 MHz
∆
C
T
/
C
T
- - 2 %
Series resistance
V
R
= 5 V, f = 470 MHz
r
s
- 0.6 0.75 Ω
Series inductance
L
s
- 0.6 - nH
1) In-line matching. For details please refer to Application Note 047
Semiconductor Group 2 1998-11-01
Loading...