Siemens BB659C Datasheet
BB 659C
Semiconductor Group
Jul-24-19981
Silicon Variable Capacitance Diode
• For VHF-TV-tuners
• High capacitance ratio
• Low series inductance
• Low series resistance
• Extremely small plastic SMD package
• Excellent uniformity and matching due to
"in-line" matching assembly procedure
1
VES05991
2
Ordering Code Pin Configuration PackageMarkingType
BB 659C
BB 659C
H
H
Q62702-B0884 inline matched
Q62702-B0880 unmatched
1 = C 2 = A SCD-80
Maximum Ratings
Symbol
ValueParameter Unit
Diode reverse voltage V30
V
R
V
RM
Peak reverse voltage (R ≥ 5kΩ)
35
mA20
I
F
Forward current
Operating temperature range - 55 ...+150 °C
T
op
T
st
g
- 55 ...+150Storage temperature
Semiconductor Group 1 1998-11-01
BB 659C
Semiconductor Group
Jul-24-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
ValuesSymbol Unit
typ. max.min.
DC characteristics
10 nAReverse current
V
R
= 30 V
-
I
R
-
200
I
R
--Reverse current
V
R
= 30 V,
T
A
= 85 °C
AC characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 25 V, f = 1 MHz
V
R
= 28 V, f = 1 MHz
36
27
2.5
2.4
39
30.2
2.72
2.55
C
T
42
33.2
3.05
2.8
pF
-11.1Capacitance ratio
V
R
= 2 V,
V
R
= 25 V, f = 1 MHz
C
T2
/
C
T25
9.5 -
Capacitance ratio
V
R
= 1 V,
V
R
= 28 V, f = 1 MHz
C
T1
/
C
T28
13.5 15.3 -
Capacitance matching 1)
V
R
= 1V to 28V , f = 1 MHz, 4 diodes sequence
V
R
= 1V to 28V , f = 1 MHz, 7 diodes sequence
∆
C
T
/
C
T
-
-
0.3
0.5
1
2
%
Series resistance
V
R
= 1 V, f = 1 GHz
r
s
- 0.6 0.7
Ω
Series inductance
L
s
- 0.6 - nH
1) In-line matching. For details please refer to Application Note 047
Semiconductor Group 2 1998-11-01
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