Siemens BB644 Datasheet
BB 644
Semiconductor Group
Jul-09-19981
Silicon Variable Capacitance Diode
Preliminary data
• For VHF TV-tuners
• High capacitance ratio
• Low series inductance
• Low series resistance
• Extremely small plastic SMD package
• Excellent uniformity and matching due to
"in-line" matching assembly procedure
Type Marking Ordering Code Pin Configuration Package
BB 644
BB 644
yellow 4
yellow 4
Q62702-B0905 group matched
Q62702-B0907 unmatched
1 = C 2 = A SOD-323
Maximum Ratings
Parameter
ValueSymbol Unit
Diode reverse voltage V30
V
R
Peak reverse voltage (R ≥ 5kΩ)
35
V
RM
I
F
20Forward current mA
Operating temperature range
T
op
-55 ...+150 °C
Storage temperature
T
st
g
-55 ...+150
Semiconductor Group 1 1998-11-01
BB 644
Semiconductor Group
Jul-09-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
R
= 30 V
I
R
- - 10 nA
Reverse current
V
R
= 30 V,
T
A
= 85 °C
I
R
- - 100
AC characteristics
44.5
34.2
2.85
2.75
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 25 V, f = 1 MHz
V
R
= 28 V, f = 1 MHz
C
T
pF
39
29.4
2.5
2.4
41.8
31.85
27
2.55
12.5
C
T2
/
C
T25
11Capacitance ratio
V
R
= 2 V,
V
R
= 25 V, f = 1 MHz
-11.8
17.516.415.2
C
T1
/
C
T28
Capacitance ratio
V
R
= 1 V,
V
R
= 28 V, f = 1 MHz
2 %
∆
C
T
/
C
T
--Capacitance ratio 1)
V
R
= 1 V,
V
R
= 28 V, f = 1 MHz
0.75
Ω
- 0.6
r
s
Series resistance
V
R
= 1 V, f = 1 GHz
-
L
s
1.8-Series inductance nH
1) In-line matching. For details please refer to Application Note 047
Semiconductor Group 2 1998-11-01
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