Siemens BB640 Datasheet

BB 640

Silicon Variable Capacitance Diode BB 640

● For Hyperband TV/VTR tuners, Bd I

Type Ordering Code Pin Configuration Marking Package

(tape and reel) 1 2

BB 640 Q62702-B589 C A red S SOD-323

Maximum Ratings
Parameter Symbol Values Unit

Reverse voltage VR 30 V

VRMReverse voltage (R ≥ 5 kΩ)35

Forward current IF 20 mA
Operating temperature range T
Storage temperature range T

op – 55 … + 150 ˚C
stg – 55 … + 150

Thermal Resistance

Junction - ambient R

th JA ≤ 450 K/W

Semiconductor Group 1

02.96

Electrical Characteristics

f

A = 25 ˚C, unless otherwise specified.

at T

BB 640

Parameter Symbol

Reverse current

R = 30 V

V

R = 30 V, TA = 85 ˚C

V

Diode capacitance,

R nA

I

CT pF

= 1 MHz

R = 1 V

V

R = 28 V

V

Capacitance ratio

R = 1 V, 28 V, f = 1 MHz

V

Capacitance matching

R = 1 V … 28 V, f = 1 MHz

V

Series resistance

C

T1

CT28

∆CT

CT
r

s Ω– 1.15 –

CT = 30 pF, f = 100 MHz
Series inductance L

S nH–2–

min. typ.

–
–

62

2.9

–
–

–
–

UnitValues

max.

10
200

76

3.4
–19.5 – 25

%– – 2.5

Diode capacitance C

T = f (VR)

f = 1 MHz

Semiconductor Group 2