Siemens BB639C Datasheet
BB 639C
Silicon Variable Capacitance Diode
• For tuning of extended frequency band
in VHF TV / VTR tuners
Type Marking Ordering Code Pin Configuration Package
BB 639C yellow S Q62702-B695 1 = C 2 = A SOD-323
Maximum Ratings
Parameter
Diode reverse voltage
Peak reverse voltage (R ≥ 5kΩ)
Forward current
Operating temperature range
Storage temperature
Symbol Value Unit
V
V
I
T
T
R
RM
F
op
stg
30 V
35
20 mA
-55 ...+125 °C
-55 ...+150
Semiconductor Group
Apr-30-19981
BB 639C
Electrical Characteristics at
Parameter
DC characteristics
Reverse current
V
= 30 V
R
Reverse current
V
= 30 V,
R
T
= 85 °C
A
AC characteristics
Diode capacitance
V
= 1 V, f = 1 MHz
R
V
= 2 V, f = 1 MHz
R
V
= 25 V, f = 1 MHz
R
V
= 28 V, f = 1 MHz
R
V
= 2 V,
R
V
= 25 V, f = 1 MHz
R
T
= 25°C, unless otherwise specified.
A
Symbol Values Unit
I
R
I
R
C
T
C
/
C
T2
T25
min. typ. max.
- - 10 nA
- - 200
36
27
2.5
2.4
9.5Capacitance ratio
39
30.2
2.72
2.55
11.1 -
42
33.2
3.05
2.8
pF
-
Capacitance ratio
V
V
R
R
= 1 V,
= 1 V,
V
= 28 V, f = 1 MHz
R
V
= 28 V, f = 1 MHz
R
Series resistance
V
= 5 V, f = 470 MHz
R
Series inductance
1) In-line matching. For details please refer to Application Note 047
C
r
L
T1
C
T
s
s
/
C
T28
/
C
T
-Capacitance matching
15.3 -13.5
- 2.5∆
%
- 0.6 0.75 Ω
- 1.8 - nH
Semiconductor Group
Apr-30-19982
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