Siemens BB619C Datasheet
BB 619C
Silicon Variable Capacitance Diode
• For tuning of extended frequency band
in VHF TV/ VTR tuners
Type Marking Ordering Code Pin Configuration Package
BB 619C yellow S Q62702-B683 1 = C 2 = A SOD-123
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
Peak reverse voltage (R ≥ 5kΩ)
Forward current
Operating temperature range
Storage temperature
V
V
I
T
T
F
R
RM
op
stg
30 V
35
20 mA
- 55 ... + 125 °C
- 55 ... + 150
Thermal Resistance
Junction - ambient
R
thJA
≤ 450 K/W
Semiconductor Group 1 Jan-08-1997
BB 619C
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
= 30 V,
R
V
= 30 V,
R
T
= 25 °C
A
T
= 85 °C
A
I
R
-
-
-
-
10
200
nA
AC characteristics
Diode capacitance
V
= 1 V, f = 1 MHz
R
V
= 2 V, f = 1 MHz
R
V
= 25 V, f = 1 MHz
R
V
= 28 V, f = 1 MHz
R
Capacitance ratio
V
= 2 V,
R
V
= 25 V, f = 1 MHz
R
C
C
T
T2
pF
36
27
2.5
2.4
/
C
T25
39
30.2
2.72
2.55
42
33.2
3.05
2.8
-
9.5 11.1 -
Capacitance ratio
V
= 1 V,
R
V
= 28 V, f = 1 MHz
R
Capacitance matching
V
= 28 V, f = 1 MHz
R
Series resistance
V
= 5 V, f = 470 MHz
R
Series inductance
C
∆
r
L
/
C
T1
T28
13.5 15.3 -
C
/
C
T
T
%
- - 2.5
s
Ω
- 0.6 -
s
- 2.5 - nH
Semiconductor Group 2 Jan-08-1997
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