Siemens BB555 Datasheet
BB 555
Semiconductor Group
Jul-28-19981
Silicon Tuning Diode
• For UHF-TV-tuners
• High capacitance ratio
• Low series inductance
• Low series resistance
• Extremely small plastic SMD package
• Excellent uniformity and matching due to
"in-line" matching assembly procedure
1
VES05991
2
Type Marking Ordering Code Pin Configuration Package
BB 555
BB 555
B
B
Q62702-B0864 unmatched
Q62702-B0853 inline matched
1 = C 2 = A SCD-80
Maximum Ratings
Parameter
Symbol Value Unit
Diode reverse voltage
V
R
30 V
Peak reverse voltage (R ≥ 5kΩ)
V
RM
35
Forward current
I
F
20 mA
Operating temperature range
T
op
55 ...+150 °C
Storage temperature
T
st
g
55 ...+150
Semiconductor Group 1 1998-11-01
BB 555
Semiconductor Group
Jul-28-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
R
= 30 V
I
R
- - 10 nA
Reverse current
V
R
= 30 V,
T
A
= 85 °C
I
R
- - 200
AC characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 25 V, f = 1 MHz
V
R
= 28 V, f = 1 MHz
C
T
17.5
14.1
2.05
1.9
18.7
15
2.24
2.1
20
16.1
2.4
2.3
pF
Capacitance ratio
V
R
= 2 V,
V
R
= 25 V, f = 1 MHz
C
T2
/
C
T25
6 6.7 7.5 -
Capacitance ratio
V
R
= 1 V,
V
R
= 28 V, f = 1 MHz
C
T1
/
C
T28
8.2 8.9 9.8
Capacitance matching 1)
V
R
= 1V to 28V , f = 1 MHz, 4 diodes sequence
V
R
= 1V to 28V , f = 1 MHz, 7 diodes sequence
∆
C
T
/
C
T
-
-
0.15
0.25
1
2
Series resistance
V
R
= 3 V, f = 470 MHz
r
s
- 0.58 -
Ω
Series inductance
L
s
- 0.6 - nH
1) In-line matching. For details please refer to Application Note 047
Semiconductor Group 2 1998-11-01
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