BB 535
Silicon Variable Capacitance Diode
• For UHF and TV/TR tuners
• Large capacitance ratio, low series resistance
Type Marking Ordering Code Pin Configuration Package
BB 535 white S Q62702-B580 1 = C 2 = A SOD-323
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
Peak reverse voltage (R ≥ 5kΩ)
Forward current
Operating temperature range
Storage temperature
V
V
I
T
T
F
R
RM
op
stg
30 V
35
20 mA
- 55 ... + 125 °C
- 55 ... + 150
Thermal Resistance
Junction - ambient
R
thJA
≤ 450 K/W
Semiconductor Group 1 Jan-08-1997
BB 535
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
= 30 V,
R
V
= 30 V,
R
T
= 25 °C
A
T
= 85 °C
A
I
R
-
-
-
-
10
200
nA
AC characteristics
Diode capacitance
V
= 1 V, f = 1 MHz
R
V
= 2 V, f = 1 MHz
R
V
= 25 V, f = 1 MHz
R
V
= 28 V, f = 1 MHz
R
Capacitance ratio
V
= 2 V,
R
V
= 25 V, f = 1 MHz
R
C
C
T
T2
pF
17.5
14.01
2.05
1.9
/
C
T25
18.7
15
2.24
2.1
20
16.1
2.4
2.3
-
6 6.7 7.5
Capacitance ratio
V
= 1 V,
R
V
= 28 V, f = 1 MHz
R
Capacitance matching
V
= 1 ... 28 V, f = 1 MHz
R
Series resistance
V
= 3 V, f = 470 MHz
R
Series inductance
C
∆
r
L
/
C
T1
T28
8.2 8.9 9.8
C
/
C
T
T
%
- - 2.5
s
Ω
- 0.55 0.65
s
- 2 - nH
Semiconductor Group 2 Jan-08-1997