Siemens BAT 15-098 Technical data
BAT15-098
Silicon Schottky Diode |
BAT 15-098 |
Preliminary Data
●DBS mixer application to 10 GHz
●Low noise figure
●Low barrier type
ESD: Electrostatic discharge |
sensitive device, observe handling precautions! |
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Type |
Marking |
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Ordering Code |
Pin Configuration |
Package1) |
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(tape and reel) |
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BAT 15-098 |
white B |
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Q62702-A0062 |
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SOD-123 |
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Maximum Ratings
Parameter |
Symbol |
Values |
Unit |
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Reverse voltage |
VR |
4 |
V |
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Forward current |
IF |
110 |
mA |
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Power dissipation, TS ≤ 80 ˚C |
Ptot |
100 |
mW |
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Storage temperature range |
Tstg |
– 55 … + 150 |
˚C |
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Operating temperature range |
Top |
– 55 … + 150 |
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Thermal Resistance |
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Junction - ambient2) |
Rth JA |
≤ 770 |
K/W |
Junction - soldering point |
Rth JS |
≤ 690 |
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1)For detailed information see chapter Package Outlines.
2)Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group |
1 |
07.94 |
BAT 15-098
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Parameter |
Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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Breakdown voltage |
V(BR) |
4 |
– |
– |
V |
IR = 5 A |
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Forward voltage |
VF |
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IF = 1 mA |
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– |
0.23 |
– |
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IF = 10 mA |
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– |
0.32 |
– |
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Forward voltage matching |
VF |
– |
– |
20 |
mV |
IF = 10 mA |
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Diode capacitance |
CT |
– |
– |
0.35 |
pF |
VR = 0, f = 1 MHz |
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Forward resistance |
RF |
– |
5.5 |
– |
Ω |
IF = 10 mA/50 mA |
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Semiconductor Group |
2 |
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