Siemens BAT 15-098 Technical data

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Silicon Schottky Diode BAT 15-098

Preliminary Data

● DBS mixer application to 10 GHz

● Low noise figure

● Low barrier type

ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering Code

Marking

Pin Configuration

Package

(tape and reel)

BAT 15-098 Q62702-A0062white B

SOD-123

Maximum Ratings
Parameter Symbol Values Unit

Reverse voltage V

R 4V

Forward current IF 110 mA
Power dissipation, T

S ≤ 80 ˚C Ptot 100 mW

Storage temperature range Tstg – 55 … + 150 ˚C
Operating temperature range T

op – 55 … + 150

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 770 K/W

Junction - soldering point Rth JS ≤ 690

1)

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.

Semiconductor Group 1

07.94

Electrical Characteristics per Diode

A = 25 ˚C, unless otherwise specified.

at T

BAT 15-098

Parameter Symbol

Breakdown voltage

R = 5 µA

I

Forward voltage

F = 1 mA

I

F = 10 mA

I

Forward voltage matching

I

F = 10 mA

Diode capacitance

R = 0, f = 1 MHz

V

Forward resistance

F = 10 mA/50 mA

I

V

(BR) V4––

F

V

∆V

F mV––20

C

T pF– – 0.35

R

F Ω– 5.5 –

min. typ.

–
–

0.23

0.32

UnitValues

max.

–
–

Semiconductor Group 2

BAT 15-098

Forward current IF = f (VF)

Forward current IF = f (TS; TA*)

*Package mounted on alumina

Reverse current I

R = f (VR)

Diode capacitance C

f = 1 MHz

T = f (VR)

Semiconductor Group 3

S11-Parameters

Typical impedance characteristics (with external bias I and Z

BAT 15-098

0 = Ω)

fI= 0.02 mA

GHz MAG ANG

1
2
3
4
5
6
7
8
9
10

0.96

0.95

0.94

0.91

0.88

0.87

0.86

0.89

0.91

0.93

– 22.19
– 44.30
– 68.60

– 96.40
– 127.50
– 165.30
– 150.50

109.60

75.20

45.10

I= 0.05 mA
MAG ANG

0.83

0.82

0.80

0.76

0.74

0.72

0.72

0.78

– 24.20
– 46.30

– 71.30
– 100.00
– 133.50
– 174.30

141.50

101.70

0.84

0.88

68.89

41.10

I= 0.1 mA
MAG ANG

0.71

0.68

0.65

0.61

0.57

0.55

0.60

– 24.59
– 46.70

– 72.30
– 101.50
– 138.50
– 151.30

133.70

0.68

0.77

0.83

94.70

63.90

38.40

I= 0.2 mA
MAG ANG

0.71

0.68

0.65

0.61

0.57

0.55

0.60

– 24.59
– 46.70

– 72.30
– 101.50
– 138.50
– 151.30

133.70

0.68

0.77

0.83

94.70

63.90

38.40

I= 0.5 mA
MAG ANG

0.06

0.04

0.03

0.09

0.18

– 36.11
– 53.72
– 94.30

122.49

101.50

0.29

0.41

0.52

0.61

0.71

81.30

65.70

49.50

33.50

19.49

S11 = f (f,I)

Semiconductor Group 4