Siemens 4N39 Datasheet
4N39
PHOTO SCR OPTOCOUPLER
FEATURES
• Turn On Current (I
• Gate Trigger Current (I
), 5.0 mA Typical
FT
), 20 mA
GT
• Surge Anode Current, 10 Amp
• Blocking V oltage, 200 VA C
• Gate T rigger Voltage (V
• Isolation V oltage, 5300 VA C
PK
), 0.6 Volt
GT
RMS
• Solid State Reliability
• Standard DIP Package
• Underwriters Lab File #E52744
DESCRIPTION
The 4N39 is an optically coupled SCR with a Gallium Arsenide infrared emitter and a silicon photo
SCR sensor. Switching can be achieved while
maintaining a high degree of isolation between
triggering and load circuits. The 4N39 can be used
in SCR triac and solid state relay applications
where high blocking voltages and low input current
sensitivity are required.
Maximum Ratings
Emitter
Peak Reverse Voltage ....................................6.0 V
Peak Forward Current
(100 µ
s, 1% Duty Cycle)............................. 1.0 A
Continuous Forward Current........................ 60 mA
Power Dissipation at 25 °
Derate Linearly from 50 °
C..........................100 mW
C.........................2 mW/ ° C
Detector
Reverse Gate Voltage.....................................6.0 V
Anode Peak Blocking Voltage .......................200 V
Peak Reverse Gate Voltage...............................6 V
Anode Current............................................ 300 mA
Surge Anode Current (100 µ
s duration).......... 10 A
Surge Gate Current (5 ms duration)........... 100 mA
Power Dissipation, 25 °
Derate Linearly from 25 °
C ambient ..............400 mW
C.........................8 mW/ ° C
Package
Isolation Test Voltage (1 sec.) .......... 5300 VAC
Isolation Resistance
V
=500 V, T
IO
V
=500 V, T
IO
=25 ° C ............................... ≥ 10
A
=100 ° C ............................. ≥ 10
A
RMS
12
11
Ω
Ω
Total Package Dissipation..........................450 mW
Derate Linearly from 50 °
Operating Temperature................–55 °
Storage Temperature....................–55 °
C.........................9 mW/ ° C
C to +100 ° C
C to +150 ° C
Soldering Temperature (10 s.).......................260 °
Package Dimensions in Inches (mm)
Characteristics (T
Emitter
Forward Voltage V
Reverse Current I
Detector
Forward Blocking
Voltage
Reverse Blocking
Voltage
On-state Voltage
Holding Current I
Gate Trigger
Voltage
Forward Leakage
Current
Reverse Leakage
Current
C
Package
Turn-0n Current I
Isolation Capacitance
.248 (6.30)
.256 (6.50)
.039
(1.00)
min.
4°
typ.
.018 (0.45)
.022 (0.55)
3
4
5
.335 (8.50)
.343 (8.70)
=25 ° C)
A
Pin One ID.
12
6
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
Sym-
Min. Typ.Max.Unit Condition
bol
F
R
V
V
V
V
I
I
200 V
DM
200 V
RM
TM
H
GT
DM
RM
FT
1
Anode
NC
2
3
.300 (7.62)
typ.
18° typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
Cathode
1.2 1.5 V I
6
5
4
F
10 µ AV
R
T
Id=150 µ A
1.2 V I
TM
200 µ AR
V
0.6 1.0 V V
R
R
50 µ AR
V
I
F
T
50 µ AR
V
I
F
T
15 30 mA V
R
814 V
R
2 pF f=1 MHz
Gate
Anode
Cathode
.110 (2.79)
.150 (3.81)
=20 mA
=5 V
R
=10 K
GK
=100 ° C
A
=300 mA
=27 K
GK
=50 V
FX
=100 V
FX
=27 K
GK
=10 K
L
=10 K
GK
=200 V
RX
=0,
=100 ° C
A
=27 K
GK
=200 V
RX
=0,
=100 ° C
A
=50 V
FX
=10 K
GK
=100 V
FX
=27 K
GK
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
5–36
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