Shindengen Electric Manufacturing Company Ltd S15SC4M Datasheet

SHINDENGEN

Schottky Barrier Diode

S15SC4M

40V 15A

FEATURES

●

Tj150℃

●PRRSM avalanche guaranteed

● Small θ jc

●High current capacity

APPLICATION

●Switching power supply

●DC/DC converter

●Home Appliances, Office Equipment

●Telecommunication

OUTLINE DIMENSIONS

Case : MTO-3P

Twin Diode

Unit : mm

RATINGS

●Absolute Maximum Ratings (If not specified Tc=25℃)

Item Symbol Conditions Ratings Unit

Storage Temperature

Operating Junction Temperature

Maximum Reverse Voltage

Repetitive Peak Surge Reverse Voltage

Average Rectified Forward Current

Peak Surge Forward Current
Repetitive Peak Surge Reverse Power

Mounting Torque

●Electrical Characteristics (If not specified Tc=25℃)

Item Symbol Conditions Ratings Unit

Forward Voltage
Reverse Current

Junction Capacitance

Thermal Resistance

Tstg -40～150 ℃

Tj 150 ℃

V

RM

V

Pulse width 0.5ms, duty 1/40

RRSM

I

50Hz sine wave, R-load, Rating for each diode Io/2, Tc=135℃

O

I

FSM

50Hz sine wave, Non-repetitive 1 cycle peak value, Rating of per diode, Tj=125℃

P

Pulse width 10μs, Rating of per diode, Tj=25℃

RRSM

TOR

(Recommended torque：0.5N･m)

V

F

IF=7.5A, Pulse measurement, Rating of per diode

I

VR=V

R

Cj

θjc

RM,

f=1MHz, VR=10V Rating of per diode

junction to case

Pulse measurement, Rating of per diode

40 V
45 V

15A

170 A

330 W

0.8 N･m

Max.0.55 V

Max.5 mA
Typ.340 pF
Max.1.2 ℃/W

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

10

[A]

F

S15SC4M

Forward Voltage

Tc=150°C [MAX]
Tc=150°C [TYP]

1

Forward Current I

0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

Tc=25°C [MAX]
Tc=25°C [TYP]

Pulse measurement per diode

Forward Voltage VF [V]

f=1MHz

Tc=25°C

TYP

per diode

Junction Capacitance

[V]

R

Reverse Voltage V

S15SC4M

1000

0.1 1 10

100

Junction Capacitance Cj [pF]