Shindengen F05B23VR Datasheet

SHINDENGEN

VR Series Power MOSFET

F05B23VR

230V 0.5A

FEATURES

●Applicable to 4V drive.

●The static Rds(on) is small.

●Built-in ZD for Gate Protection.

APPLICATION

●DC/DC converters

●Power supplies of DC 12-24V input

●Product related to

Integrated Service Digital Network

N-Channel Enhancement type

OUTLINE DIMENSIONS

Case : B-pack

(Unit : mm)

RATINGS

●Absolute Maximum Ratings （Tc = 25℃）

Item Symbol Conditions Ratings Unit

Storage Temperature
Channel Temperature
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current（DC）
Continuous Drain Current（Peak)
Continuous Source Current（DC）

Total Power Dissipation

T

stg

T

ch

V

DSS

V

GSS

I

D

I

DP

I

S

P

T

On alumina substrate, 50.8mm□, substrate thickness 0.64t, Ta = 25℃

-55～150 ℃
150
230 V

±20

0.5

1 A

0.5

1.5 W

3.5

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

VR Series Power MOSFET

●Electrical Characteristics Tc = 25℃

Item Symbol Conditions Min. Typ. Max. Unit

V

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward Tranｓconductance
Static Drain-Source On-ｓtate Resistance
Gate Threshold Voltage
Source-Drain Diode Forward Voltage
Thermal Resistance

Total Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Time
Turn-Off Time

(BR)DSSID

I
I

R

DS(ON)ID

V

V

θja
θjc

Qg
C
C

C

= 250μA, VGS = 0V

DSS

VDS = 230V, VGS = 0V

GSS

VGS = ±20V, VDS = 0V
ID = 0.5A, VDS = 10V

g

fs

= 0.5A, VGS = 10V

THID

SDIS

iss

rss

oss

t

on

t

off

= 0.2mA, VDS = 10V

= 0.5A, VGS = 0V
junction to ambient, on alumina substrate
junction to case
VGS = 10V, ID = 0.5A, VDD = 200V

VDS = 10V, VGS = 0V, f = 1MH

ID = 0.5A, VGS = 10V, RL = 200Ω

F05B23VR

230 V

250 μA

±0.1

0.2 0.4 S

5.5 8 Ω

234V

1.5

83.3 ℃/Ｗ

35.7

2.7 nC
45

Z

4.5 pF
30
30 60 ns
50 100

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

F05B23VR Transfer Characteristics

1

0.8

[A]

D

0.6

0.4

Ta = −55°C

25°C

Drain Current I

0.2

VDS = 10V
pulse test

TYP

0

0 2 4 6 8 10

100°C

150°C

Gate-Source Voltage VGS [V]

F05B23VR

[Ω]

DS(ON)

10

Static Drain-Source On-state Resistance

ID = 0.5A

Static Drain-Source On-state Resistance R

1

-50 0 50 100 150

Case Temperature Tc [°C]

VGS = 10V
pulse test

TYP