SHINDENGEN
HVX-2 Series Power MOSFET
2SK2667
( F3W90HVX2 )
900V 3A
FEATURES
●Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
●The static Rds(on) is small.
●The switching time is fast.
●Avalanche resistance guaranteed.
APPLICATION
N-Channel Enhancement type
OUTLINE DIMENSIONS
Case : MTO-3P
(Unit : mm)
●Switching power supply of AC 240V input
●High voltage power supply
●Inverter
RATINGS
●Absolute Maximum Ratings (Tc = 25℃)
Item Symbol Conditions Ratings Unit
Storage Temperature
Channel Temperature
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(DC)
Continuous Drain Current(Peak)
Continuous Source Current(DC)
Total Power Dissipation
Repetitive Avalanche Current
Single Avalanche Energy
Repetitive Avalanche Energy
Mounting Torque
T
T
V
DSS
V
GSS
I
I
DP
I
P
I
AR
E
E
TOR
stg
ch
D
Pulse width≦10μs, Duty cycle≦1/100
S
T
T
= 150℃
ch
T
AS
AR
= 25℃
ch
T
= 25℃
ch
( Recommended torque :0.5 N・m )
-55~150 ℃
150
900 V
±30
3
6A
3
65 W
3A
48 mJ
4.8
0.8 N・m
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
HVX-2 Series Power MOSFET
●Electrical Characteristics Tc = 25℃
Item Symbol Conditions Min. Typ. Max. Unit
V
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward Transconductance
Static Drain-Source On-state Resistance
Gate Threshold Voltage
Source-Drain Diode Forward Voltage
Thermal Resistance
Total Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Time
Turn-Off Time
(BR)DSSID
I
DSS
I
GSS
g
fs
R
DS(ON)ID
V
THID
V
SDIS
θjc
Q
g
C
iss
C
rss
C
oss
t
on
t
off
2SK2667 ( F3W90HVX2 )
= 1mA, VGS = 0V
VDS = 900V, VGS = 0V
VGS = ±30V, VDS = 0V
ID = 1.5A, VDS = 10V
= 1.5A, VGS = 10V
= 1mA, VDS = 10V
= 1.5A, VGS = 0V
junction to case
VDD = 400V, VGS = 10V, ID = 3A
VDS = 25V, VGS = 0V, f = 1MH
ID = 1.5A, RL = 100Ω, VGS = 10V
Z
900 V
250 μA
±0.1
1.5 2.5 S
3.5 4.7 Ω
2.5 3.0 3.5 V
1.5
1.92 ℃/W
30 nC
630
16pF
67
40 70 ns
140 230
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2667 Transfer Characteristics
6
Tc = −55°C
25°C
100°C
150°C
[A]
D
5
4
3
2
Drain Current I
1
VDS = 25V
TYP
0
0 5 10 15 20
Gate-Source Voltage VGS [V]
2SK2667
100
[Ω]
DS(ON)
10
Static Drain-Source On-state Resistance
ID = 1.5A
1
Static Drain-Source On-state Resistance R
0.1
-50 0 50 100 150
Case Temperature Tc [°C]
VGS = 10V
pulse test
TYP