SHINDENGEN
VR Series Power MOSFET
2SK1931
( F5E20 )
200V 5A
FEATURES
● Applicable to 4V drive.
● The static Rds(on) is small.
● Built-in ZD for Gate Protection.
APPLICATION
● DC/DC converters
● Power supplies of DC 12-24V input
● Product related to
Integrated Service Digital Network
N-Channel Enhancement type
OUTLINE DIMENSIONS
Case : E-pack
(Unit : mm)
RATINGS
●AbsoluteMaximumRatings(Tc=25℃)
StorageTemperature
Channel Temperature T
Drain-SourceVoltage
Gate-SourceVoltage V
ContinuousDrainCurrent(DC)
ContinuousDrainCurrent(Peak) I
ContinuousSourceCurrent(DC)
TotalPowerDissipation P
stg
ch
DSS
GSS
DP
T
150
±30
10 A
20 W
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
VR Series Power MOSFET
●Electrical Characteristics Tc = 25℃
Item Symbol Conditions Min. Typ. Max. Unit
V
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward Transconductance
Static Drain-Source On-state Resistance
Gate Threshold Voltage
Source-Drain Diode Forward Voltage
Thermal Resistance
Total Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Time
Turn-Off Time
(BR)DSSID
R
DS(ON)ID
V
θjc
C
I
DSS
I
GSS
g
fs
THID
V
SDIS
Qg
C
iss
C
rss
oss
t
on
t
off
= 1mA, VGS = 0V
VDS = 200V, VGS = 0V
VGS = ±30V, VDS = 0V
ID = 2.5A, VDS = 10V
= 2.5A, VGS = 10V
= 1mA, VDS = 10V
= 2.5A, VGS = 0V
junction to case
VGS = 10V, ID = 5A, VDD = 150V
VDS = 10V, VGS = 0V, f = 1MH
ID = 2.5A, VGS = 10V, RL = 40Ω
Z
2SK1931 ( F5E20 )
200 V
250 μA
±0.1
0.9 1.8 S
0.45 0.65 Ω
234V
1.5
6.25 ℃/W
11 nC
360
45 pF
190
55 110ns
75 150
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
10
2SK1931 Transfer Characteristics
Tc = −55°C
8
25°C
100°C
[A]
D
6
4
150°C
Drain Current I
2
VDS = 10V
pulse test
TYP
0
0 5 10 15 20
Gate-Source Voltage VGS [V]