SHINDENGEN
Switching Power Transistor
2SC4978
(TE3S8)
3A NPN
RATINGS
HSV Series
OUTLINE DIMENSIONS
Case : E-pack
Unit : mm
●Absolute Maximum Ratings
Item Symbol
Storage Temperature
Junction Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current DC
Collector Current Peak
Base Current DC
Base Current Peak
Total Transistor Dissipation
●Electrical Characteristics (Tc=25℃)
Item Symbol
Collector to Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Thermal Resistance
Transition Frequency
Turn on Time
Storage Time
Fall Time
Conditions
Ratings Unit
Tstg -55~150 ℃
Tj 150 ℃
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
T
V
(sus)
CEO
I
CBO
I
CEO
I
EBO
h
FE
VCE(sat)
VBE(sat)
θjc
f
T
Tc = 25℃
IC = 0.05A
At rated Voltage
At rated Voltage
V
= 2V, IC = 1.5A
CE
IC = 1.5A
IB = 0.08A
Junction to case
V
= 10V, IC = 0.3A
CE
Conditions
100 V
80 V
7V
3A
6A
1 A
1.5 A
10
Ratings Unit
Min 80 V
Max 0.1 mA
Max 0.1
Max 0.1 mA
Min 70
Max 0.3 V
Max 1.2 V
Max 12.5 ℃/W
TYP 50 MHz
ton Max 0.3
IC = 1.5A
ts
IB1 = 0.15A, IB2 = 0.15A
RL = 20Ω, V
BB2
= 4V
Max 1.5 μs
tf Max 0.2
W
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
BE
[V]
Base-Emitter Voltage V
3
2.5
Saturation Voltage
2
1.5
1
6A
4.5A
3A
0.5
0
1.5
[A]
B
2SC4978
= 0.3A 0.75A 1.5A 3A 4.5A 6A
C
I
3
2.5
CE
[V]
Base Current I
1.5A
0.75A
= 0.3A
C
I
Tc = 25°C
2
1.5
1
0.5
0
0.001 0.01 0.1 1
Collector-Emitter Voltage V