S2S3/S2S4
S2S3/S2S4
Mini-Flat Type
Phototriac Coupler
Features
1. Popular type
2. Small package type
3.
Conforming to UL double protective insulation (V
4.
Infrared reflow soldering type (230˚C, within 30 seconds)
5. Recognized by UL (No.64380)
Model Line-ups
■
For 100/200V line
Zero-cross circuit
not built in
Zero-cross circuit
built in
■
Application
S2S3
S2S4
1. For SSR
: 3 750V
iso
rms
Outline Dimensions
■■
±
0.25
2.54
MAX.
)
Model No.
Anode
mark
43
2
1
±
0.3
3.6
6˚
±
0.4
0.1
(Input side)
Internal connection diagram
0.6
0.2
±
4.4
1
The zero-cross circuit for S2S4
*
C0.4
0.2
±
2.6
0.1
±
0.1
5.3
+
7.0
-
(Unit : mm)
34
*
Zero-cross
circuit
2
±
0.3
0.05
±
0.2
+
0.4
0.5
-
0.2
0.7
0.2
1 Anode
2 Cathode
3 Anode/
Cathode
4 Anode/
Cathode
Absolute Maximum Ratings
■
Parameter
Input
Output
Forward current
Reverse voltage
*1
RMS ON-state current
*2
Peak one cycle surge current
Repetitive peak OFF-state voltage
*3
Isolation voltage
Operating temperature
Storage temperature
*4
Soldering temperature
*1
The definition of conduction angle θ of RMS ON-state current IT should be as shown in the right drawing. For decrease curve, refer to Fig. 2.
*2 50Hz sine curve
*3 40 to 60% RH, AC for 1 minute
*4 For 10 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
Symbol
I
F
V
R
I
T
I
surge
V
DRM
V
iso
T
opr
T
stg
T
sol
Rating
50
6
0.05
0.6 (50Hz sine wave)
600
3 750
-30 to+100
-40 to+125
260
(Ta=25˚C)
Unit
mA
V
A
rms
A
V
V
rms
˚C
˚C
˚C
(A)
I
T
0
2 • I
T
θ
1
Soldering area
θ
, θ2<= 90˚
1
θ
2
180˚
360˚90˚
0.2 mm or more
θ
S2S3/S2S4
■
Electro-optical Characteristics
Input
Forward voltage V
Reverse current I
Repetitive peak OFF-state current I
ON-state voltage V
Output
Holding current I
Critical rate of rise of OFF-state voltage
Zero-cross voltage
Minimum trigger current
Transfer
characteristics
Insulation resistance R
Turn-on time
(Ta=25˚C)
Symbol UnitParameter Conditions
IF= 20mA - 1.2 1.4 V
F
VR=3V - - 10 µA
R
V
DRM
T
H
dv/dt
S2S4 V
S2S3
S2S4 --50
OX
I
FT
ISO
t
on
=Rated
DRM
IT=0.05A - - 2.5 V
VD=6V 0.1 - 3.5 mA
V
DRM
2
= 1/ • Rated 100 - V/µs
IF= 15mA, Resistance load
VD= 6V, RL= 100Ω - - 10 mA
DC500V, 40to 60% RH
VD= 6V, RL= 100Ω ,
I
= 20mA
F
MIN. TYP. MAX.
--1µA
1 000
-
5x10
-35V
10
11
1 x 10 - Ω
- - 100
µs
Fig. 1 Forward Current vs. Ambient
Temperature
60
50
40
(mA)
F
30
20
Forward current I
10
0
-
30
0 50 100
Ambient temperature Ta (˚C) Ambient temperature Ta (˚C)
Fig. 2 RMS ON-state Current vs. Ambient
Temperature
60
50
(mArms)
40
T
30
20
10
RMS ON-state current I
0
-
30 0 50 100