S22MD2
S22MD2
Photothyristor Coupler
■ Features
1. Long distance between anode and cathode
of photothyristor on the output side :
5.08mm
2. High repetitive peak OFF-state voltage
(V
: MIN. 600V
DRM
3. Low trigger current (I
= 20kΩ
at R
G
)
: MAX. 8mA
FT
)
4. High isolation voltage between input and
output (V
: 5 000V
iso
)
rms
* S22MD2 is for 200V line.
■ Applications
1. ON-OFF operation for a low power load
2. For triggering high power thyristor and
triac
■ Outline Dimensions
±
0.25
Anode mark
±
0.8
5.08
0.2
S22MD2
1
±
0.3
1.2
9.22
14 NC
2 Anode
3 Cathode
2
±
0.5
±
2.54
34
0.5
3.0
±
567
0.25
0.85
0.5
±
0.2
±
0.1
(
Internal connection
diagram
7
0.5
±
6.5
1234
7.62
0.5
±
3.5
TYP.
0.5
0.26
θ : 0 to 13˚
5 Gate
6 Cathode
7 Anode
Unit : mm
56
±
0.3
±
0.1
θ
)
■ Absolute Maximum Ratings
Parameter
Input
Output
Forward current
Reverse voltage
RMS ON-state current
∗1
Peak one cycle surge current
∗2
Repetitive peak OFF-state voltage
∗2
Repetitive peak reverse voltage
∗3
Isolation voltage
Operating temperature
Storage temperature
∗4
Soldering temperature
(
Ta = 25˚C
Symbol Rating Unit
I
F
V
R
I
T
I
surge
V
DRM
V
RRM
V
iso
T
opr
T
stg
T
sol
50 mA
6V
200
2A
600 V
600 V
5 000
- 30 to +100
- 40 to +125
260 ˚C
mA
V
)
rms
rms
˚C
˚C
∗1 50Hz, sine wave
= 20kΩ
∗2 R
G
∗3 40 to 60%RH, AC for 1 minute
∗4 For 10 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
S22MD2
■ Electro-optical Characteristics
Parameter
Input
Output
Transfercharacteristics
Fig. 1 RMS ON-state Current vs.
Forward voltage
Reverse current
Repetitive peak OFF-state current
Repetitive peak reverse current
ON-state voltage
Holding current
Critical rate of rise of OFF-state voltage
Minimum trigger current
Isolation resistance
Turn-on time
Ambient Temperature
)
200
rms
mARMS ON-state current I
(
T
100
(
Ta =25˚C
Symbol Conditions MIN. TYP. MAX. Unit
V
I
I
V
dV/dt
I
R
= 30mA - 1.2 1.4 V
FIF
V
I
DRMVDRM
RRMVRRM
I
t
=4V
R
R
= Rated, RG=20kΩ --10-6A
= Rated, RG=20kΩ --10-6A
= 200mA - 1.0 1.4 V
TIT
VD= 6V, RG= 20kΩ - 0.3 1 mA
H
V
= 1/ Rated, RG= 20kΩ
2
DRM
= 6V, RL= 100Ω , RG= 20kΩ
FTVD
DC500V, 40 to 60%RH
ISO
VD= 6V, RG= 20kΩ, R
on
30mA
LF
=
= 100Ω , I
- - 10 A
3--V/µs
-68mA
5x 101010
11
-2050µs
-5
- Ω
Fig. 2 Forward Current vs.
Ambient Temperature
70
60
)
50
mA
(
F
40
30
)
0
-
30 0 20406080100
Ambient temperature Ta (˚C
)
Fig. 3 Forward Current vs. Forward Voltage
500
200
)
100
mA
(
F
50
20
10
Forward current I
5
2
1
0 0.5 1.0 1.5 2.0 2.5 3.0
50˚C
Forward voltage VF (V
= 75˚C
T
a
25˚C
0˚C
- 25˚C
)
20
Forward current I
10
0
-
30 0 25 50 75 100 125
Ambient temperature Ta (˚C
Fig. 4 Minimum Trigger Current vs.
Ambient Temperature
12
VD=6V
R
= 100Ω
L
)
10
mA
(
FT
8
6
4
Minimum trigger current I
2
0
-
30 0 20406080100
Ambient temperature T
RG= 10kΩ
(˚C
a
)
20kΩ
50kΩ
)
S22MD2
Fig. 5 Minimum Trigger Current vs.
Gate Resistance
100
VD=6V
R
= 100Ω
)
mA
(
FT
50
20
T
L
= 25˚C
a
10
5
Minimum trigger current I
2
1
1 2 5 10 20 50 100 200
Gate resistance R
G
(kΩ
)
Fig. 7 Critical Rate of Rise of OFF-state
Voltage vs. Ambient Temperature
100
50
20
10
)
5
V/ µs
(
2
dV/dt
Critical rate of rise of OFF-state voltage
1
0 20406080100
R
= 20kΩ
G
= 1/ Rated
V
DRM
2
Ambient temperature Ta (˚C
)
Fig. 6 Break Over Voltage vs.
Ambient Temperature
900
R
800
)
700
V
(
600
BO
G
20kΩ
500
400
300
Break over voltage V
200
100
0
-30-
20 0 20 40 60 80 100 120
Ambient temperature Ta (˚C
Fig. 8 Holding Current vs.
Ambient Temperature
1
0.5
)
mA
(
0.2
H
0.1
0.05
Holding current I
0.02
0.01
-
30 0 20406080100
Ambient temperature Ta (˚C
= 10kΩ
50kΩ
)
R
G
=
V
10kΩ
20kΩ
50kΩ
)
D
=6V
Fig. 9 Repetitive Peak OFF-state Current vs.
Ambient Temperature
5
V
)
A
2
(
-6
10
DRM
5
2
-7
10
5
2
-8
10
5
Repetitive peak OFF-state current I
2
0 20406080100
= Rated
DRM
R
= 20kΩ
G
Ambient temperature Ta (˚C
)
■ Basic Operation Circuit
Medium/High Power Thyristor Drive Circuit
S22MD2
7
Z
6
C
G
R
5
G
Z
+ V
1
CC
2
3
V
IN
4
Medium/High Power Triac Drive Circuit (Zero-cross Operation
1
+ V
CC
2
3
V
IN
●
Please refer to the chapter “Precautions for Use”(Page 78 to 93).
4
7
6
C
G
R
G
5
Load
S
: Snubber circuit
S
)
AC 100V, 200V
Load
AC 100V, 200V
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