S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T
S11MD7T/S11MD8T/S11MD9T
S21MD7T/S21MD8T/S21MD9T
❈ Taping reel type of S21MD8T is also available (S21MD8P)
❈ DIN-VDE0884 approved type is also available.
■ Features
1. Low input driving current
(
S11MD7T/ S11MD8T/ S21MD7T/ S21MD8T
IFT: MAX. 5mA
S11MD9T /S21MD9T I
: MAX.7mA
FT
2. Pin No. 5 completely molded for external
noise resistance
3. Built-in zero-cross circuit
4. High repetitive peak OFF-state voltage
(
S11MD7T / S11MD8T / S11MD9T
V
: MIN. 400V
DRM
(
S11MD8T/S21MD8T
S21MD7T / S21MD8T / S21MD9T
: MIN. 600V
V
DRM
5. Isolation voltage between input and output
(
: 5 000V
V
iso rms
)
6. Recognized by UL, file No.E64380
■ Model Line-ups
100V line 200V line
No zero-cross
circuit
Built-in zerocross circuit
S11MD7T/
S11MD9T
S11MD8T S21MD8T
S21MD7T/
S21MD9T
)
)
■ Outline Dimensions
Low Input Driving Type
Phototriac Coupler
Internal connection
diagram
46
S11MD8T
Anode
mark
123
±
0.25
2.54
±
7.12
0.5
±
3.35
∗ Zero-cross circuit for S11MD8T and S21MD8T
0.5
0.5
±
3.7
0.5
±
6.5
±
0.2
0.9
±
0.3
1.2
0.5
±
3.5
TYP.
0.5
±
0.1
0.5
1 Anode
2 Cathode
3 NC
123
7.62
0.26
θ : 0 to 13
46
±
0.3
±
0.1
4 Anode/
Cathode
6 Anode/
Cathode
(
Unit : mm
❈
Zero-cross
circuit
θ
˚
)
■ Applications
1. For triggering medium/high power triacs
■ Absolute Maximum Ratings
Parameter Symbol
Input
Forward current I
Reverse voltage V
RMS ON-state current I
Output
∗1
Peak one cycle surge current I
Repetitive peak OFF-state voltage V
∗2
Isolation voltage V
Operating temperature T
Storage temperture T
∗3
Soldering temperature T
∗1 50Hz Sine wave
∗2 40 to 60%RH, AC for 1 minute, f = 60Hz
∗3 For 10 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
S11MD7T/S11MD8T
S11MD9T
F
R
T
surge
DRM
iso
opr
stg
sol
Rating
S21MD7T/S21MD8T/
S21MD9T
50 mA
6V
0.1
1.2 A
400 600 V
5 000
- 30 to +100 ˚C
- 55 to +125 ˚C
260 ˚C
(
Ta= 25˚C
Unit
A
rms
V
rms
)
S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T
■ Electro-optical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Input
Output
Minimum trigger
current
Transfer
charac-
teristics
Forward voltage V
Reverse current I
Repetitive peak OFF-state current
S11MD7T/S21MD7T
ON-state voltage
S11MD9T/S21MD9T
S11MD8T/S21MD8T
Holding current I
Critical rate of rise of OFF-state voltage
Zere-cross voltage
S11MD8T/S21MD8T
S11MD7T/S21MD7T
S11MD8T/S21MD8T
S11MD9T/S21MD9T
Isolation resistance R
S11MD7T
Turn-on time
S11MD9T/S21MD7T/
S21MD9T
S11MD8T/S21MD8T
= 20mA - 1.2 1.4 V
FIF
RR
I
DRMVDRM
V
=3VV--10
= Rated - - 10
TIT
= 0.1A
- 1.5 2.5
- 1.7 2.5
VD= 6V 0.1 0.5 3.5 mA
H
V
dV/dt
V
OX F
I
FT
= 1/ • Rated 100 - - V/µs
2
DRM
= 10mAResistance load, I - - 35 V
VD= 6V, RL= 100Ω
--5
--7
DC500V, 40 to 60%RH
ISO
5x101010
11
- 70 100
VD= 6V, RL= 100Ω
t
on
= 20mA
I
F
-2050
(
Ta = 25˚C
-5
-6
mA
- Ω
)
A
A
V
µs- 60 100
Fig. 1 RMS ON-state Current vs.
Ambient Temperature
0.10
)
Arms
(
T
0.05
RMS ON-state current I
0
-
30 0 20406080100
Ambient temperature Ta (˚C
Fig. 2 Forward Current vs.
Ambient Temperature
70
60
)
50
mA
(
F
40
30
20
Forward current I
10
0
-
)
30 0 25 50 75 100 125
Ambient temperature Ta (˚C
)
S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T
Fig. 3 Forward Current vs. Forward Voltage
500
200
)
100
mA
(
F
Ta= 100˚C
50
20
10
Forward current I
5
2
1
75˚C
50˚C
0 0.5 1.0 1.5 2.5 3.02.0
Forward voltage VF (V
25˚C
0˚C
-
30˚C
)
Fig. 5 Relative Repetitive Peak OFF-State
Voltage vs. Ambient Temperature
1.3
)
1.2
1.1
T = 25˚C
(
DRM
1.0
/V
)
a
0.9
jj
T=T
(
0.8
DRM
Relative repetitive peak OFF-state voltage
V
0.7
-
30
S11MD7T/S21MD7T
S11MD9T/S21MD9T
S11MD8T/S21MD8T
0 20406080100
Ambient temperature T
a
(˚C)
Fig. 7 Holding Current vs.
Ambient Temperature
10
5
)
mA
(
2
H
Holding current I
S11MD8T/S21MD8T
1
0.5
0.2
0.1
-
30 100
S11MD7T/S21MD7T
S11MD9T/S21MD9T
Ambient temperature T
a
(˚C
=6V
V
D
806040200
)
Fig. 4 Minimum Trigger Current vs.
Ambient Temperature
12
)
10
mA
(
FT
8
6
4
Minimum trigger current I
2
0
-
30
S11MD9T/S21MD9T
S11MD8T/S21MD8T
Ambient temperature Ta (˚C
S11MD7T/S21MD7T
V
R
=6V
D
= 100Ω
L
)
100806040200
Fig. 6 ON-state Voltage vs. Ambient
Temperature
1.9
1.8
)
V
(
1.7
T
1.6
1.5
ON-state voltage V
S11MD7T/S21MD7T
S11MD9T/S21MD9T
1.4
1.3
-
30 0 20 100
Ambient temperature T
40 60 80
S11MD8T
(˚C)
a
= 100mA
I
T
S21MD8T
Fig. 8-a Repetitive Peak OFF-state Current
vs. OFF-state Voltage
2
)
A
(
-9
10
DRM
5
2
-10
10
Repetitive peak OFF-state current I
5
100 200 300 400 500 600
(
S11MD7T/S11MD9T
OFF-state voltage V
)
= 25˚C
T
a
)
(V
D
S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T
Fig. 8-b Repetitive Peak OFF-state Current
vs. OFF-state Voltage
2
Ta= 25˚C
)
A
(
-7
10
DRM
5
2
-8
10
Repetitive peak OFF-state current I
5
100 200 300 400 500 600
(
S11MD8T/S21MD8T
S21MD8T
S11MD8T
OFF-stage voltage VD (V
)
)
Fig. 9-a Repetitive Peak OFF-state Current
vs. Ambient Temperature
10
)
A
(
10
DRM
10
10
(
S11MD7T/S11MD9T/S21MD7T/S21MD9T
-7
V
= 400V (S11MD7T/S11MD9T
D
V
= 600V (S21MD7T/S21MD9T
D
-8
-9
-10
)
)
Fig. 8-c Repetitive Peak OFF-state Current
vs. OFF-state Voltage
(
S21MD7T/S21MD9T
)
-9
A
10
(
5
DRM
2
-10
10
5
2
Repetitive peak OFF-state current I
-11
10
100 200 300 400 500 600
Off-state voltage VD (V
)
T
=25˚C
a
)
Fig. 9-b Repetitive Peak OFF-state Current
)
vs. Ambient Temperature
(S11MD8T/S21MD8T
-4
)
A
(
DRM
10
V
= 400V (S11MD8T
D
V
= 600V (S21MD8T
D
-5
10
-6
10
-7
10
)
)
S21MD8T
)
S11MD8T
-11
10
Repetitive peak OFF-state current I
-12
10
-
30 0 100
20 40 60 80
Ambient temperature Ta (˚C
Fig.10 Zero-cross Voltage vs.
Ambient Temperature
(S11MD8T/S21MD8T
R load
I
= 10mA
F
)
25
V
(
OX
20
Zero-cross voltage V
15
-
30 0 20406080100
Ambient temperature T
-8
10
Repetitive peak OFF-state current I
-9
10
-
)
30 0 100
20 40 60 80
Ambient temperature T
(˚C)
a
Fig.11-a Turn-on Time vs. Forward Current
(
)
(˚C)
a
200
)
100
µs
(
on
50
Turn-on time t
30
20
5
10
Forward current I
S11MD7T
20
(mA
F
VD=6V
R
)
= 100Ω
L
)
50
S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T
Fig.11-b Turn-on Time vs. Forward Current Fig.11-c Turn-on Time vs. Forward Current
100
)
50
µs
(
on
20
Turn-on time t
10
5 5
(
S11MD8T/S21MD8T
Forward current I
2010
(mA
F
V
R
)
Fig.12-a ON-state Current vs.
ON-state Voltage
(
S11MD7T/S21MD7T/S11MD9T/S21MD9T
100
I
= 20mA
F
90
= 25˚C
T
a
80
)
70
mA
(
T
60
50
40
30
ON-state current I
20
10
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
S11MD7T
S21MD7T
S11MD9T
S21MD9T
ON-state voltage V
)
(V
T
=6V
D
= 100Ω
L
)
50
(
S11MD9T/S21MD7T/S21MD9T
200
)
100
µs
(
on
50
Turn-on time t
30
20
10
Forward current IF (mA
)
VD=6V
= 100Ω
R
L
20
)
50
Fig.12-b ON-state Current vs.
ON-state Voltage
)
100
= 20mA
I
F
90
= 25˚C
T
a
80
)
70
mA
(
T
60
50
40
30
ON-state current I
20
10
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
(
S11MD8T/S21MD8T
S21MD8T
ON-state voltage V
T
(V
)
)
S11MD8T
■ Basic Operation Circuit
S11MD7T/S11MD8T/S11MD9T
S21MD7T/S21MD8T/S21MD9T
+V
CC
V
IN
●
Please refer to the chapter “ Precautions for Use.”
1
2
Zerocross
circuit
6
4
Zero-cross Circuit
(
S11MD8T/S21MD8T
Load
AC100V
(
S11MD7T/S11MD8T/S11MD9T
AC200V
(
S21MD7T/S21MD8T/S21MD9T
)
)
)
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