Sharp S21MD3V Datasheet

High Noise Resistance Type

S21MD3V

❈ Lead forming type and taping reel type are also available. (S21MD3W/S21MD3P

..

❈❈ TUV (VDE0884) approved type is also available as an option.

■ Features ■ Outline Dimensions

1. High critical rate of rise of OFF-state voltage
(dv/dt : MIN. 500V/µs

2. High repetitive peak OFF-state voltage
(V

: MIN. 600V

DRM

3. Isolation voltage between input and output
V

: 5 000Vrms

iso

4. UL recognized, file No.E64380

❈ S21MD3V is for 200V line.

■ Applications

1. For triggering medium/high power triac

)

)

(

S21MD3V/ S21MD3W

)

Phototriac Coupler

)

±

0.25

2.54

456

Anode
mark

0.5

±

3.35

S21MD3V

12

±

0.5

7.12

0.5

±

3.7

0.5

3

0.9

1.2

0.5

±

6.5

±

0.2

±

0.3

0.5

±

3.5

TYP.

0.5

±

0.1

(

Internal connection
diagram

456

123

±

0.3

7.62

±

0.1

0.26

θ : 0 to 13 ˚

θ

S21MD3V

Unit : mm

1 Anode
2 Cathode
3 NC
4 Anode/

Cathode

5 No external

connection

6 Anode/

Cathode

)

■ Absolute Maximum Ratings

(

Ta = 25˚C

)

Parameter Symbol Rating Unit

Input

Forward current I
Reverse voltage V
RMS ON-state current I

Output

∗1

Peak one cycle surge current
Repetitive peak OFF-state voltage V

∗2

Isolation voltage
Operating temperature T
Storage temperature T

∗3

Soldering temperature

∗1 Sine wave
∗2 40 to 60%, RH

AC 1 minute, f= 60Hz

∗3 For 10 seconds

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,

data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”

F

R

T

I

surge

DRM

V

iso

opr

stg

T

sol

50 mA

6V

100

mA

rms

1.2 A

600 V

5 000

- 30 to + 100

- 55 to + 125

V

rms

˚C
˚C

260 ˚C

S21MD3V

■ Electro-optical Characteristics

Parameter

Input

Output

Transfer
charac­teristics

Fig. 1 RMS ON-state Current vs.

Ambient Temperature

)

A

(

T rms

Forward voltage
Reverse current
Repetitive peak OFF-state current
On-state voltage
Holding current

Critical rate of rise of
OFF-state voltage

Minimum trigger current
Isolation resistance
Turn-on time

0.10

0.05

Symbol

V

F

I

R

I

DRM

V

T

I

H

dV/dt

I

FT

R

ISO

t

on

Conditions

= 30mA

I

F

=3V

V

R

= Rated

V

DRM

= 100mA

I

T

=6V

V

D

V
V

2

= 1/ Rated

DRM

= 6V, RL= 100Ω

D

DC500V, 40 to 60% RH
VD= 6V, IF= 30mA, RL= 100Ω

Fig. 2 Forward Current vs.

Ambient Temperature

70

60

)

50

mA

(

F

40

30

(

Ta = 25˚C

MIN. TYP. MAX. Unit

- 1.2 1.4 V

--10

--10

-5

-6

- 1.7 2.5 V

0.1 1 3.5 mA

500 - - V/µ s

- - 15 mA

5x101010

11

- Ω

− 100 250 µs

)

A
A

RMS ON-state current I

0

-

30 0 20406080100

Ambient temperature Ta (˚C

)

Fig. 3 Forward Current vs. Forward Voltage

200

100

Ta= 100˚C

)

50

mA

(

F

20

10

Forward current I

75˚C
50˚C

5

2

1

0 0.5 1.0 1.5 2.5 3.02.0

Forward voltage V (V

25˚C

- 30˚C

0˚C

)

F

20

Forward current I

10

0

-

30 0 25 50 75 100 125

Ambient temperature T

(˚C)

a

Fig. 4 Minimum Trigger Current vs.

Ambient Temperature

14

12

)
mA

(

10

FT

8

6

4

Minimum trigger current I

2

0

-30-

20 20 40 60 80

Ambient temperature Ta (˚C

V

D

R

L

)

=6V
= 100Ω

1000