Sharp S21MD3TV Datasheet

S11MD5T/S21MD3TV/S21MD4TV

S11MD5T/S21MD3TV/
S21MD4TV

1. NO.5 pin completely sealed in the mold for
external noise resistance

2. Built-in zero-cross circuit (S21MD4TV

3. High repetitive peak OFF-state voltage.

S11MD5T V
S21MD3TV/S21MD4TV V

: MIN. 400V

DRM

DRM

4. Isolation voltage between input and output
(Viso : 5 000 Vrms

)

5. Recognized by UL : recognized, file No. E64380

■ Applications

1. For triggering of power triac

■ Model Line-ups

100V S11MD5T
200V

S21MD3TV/S21MD4TV

)

: MIN. 600V

High Noise-resistance Type
Phototriac Coupler

■ Outline Dimensions■ Features

S11MD5T/S21MD3TV
S21MD4TV

46

S11MD5T

Anode
mark

0.5

±

3.35

Marking of S21MD3TV :

Marking of S21MD4TV :
❈ Zero-cross circuit (S21MD4TV

2.54

1

±

0.25

7.12

2

3

0.9

1.2

±

0.5

0.5

0.5

±

3.7

Internal connection

diagram

0.5

±

6.5

±

0.2

±

0.3

0.5

±

3.5

TYP.

0.5

±

0.1

θ : 0 to 13 ˚

1 Anode
2 Cathode
3 NC

S21MD3T

S21MD4T

64

123

±

0.3

7.62

±

0.1

0.26

)

(

Unit : mm

❈

Zero-cross
circuit

θ

4 Anode/

Cathode

6 Anode/

Cathode

)

■ Absolute Maximum Ratings

Parameter Symbol

Input

Forward current
Reverse voltage V
RMS ON-state current

Output

∗1

Peak one cycle surge current I
Repetitive peak OFF-state voltage

∗2

Isolation voltage V

V

Operating temperature T
Storage temperature T

∗3

Soldering temperature T

∗1 Sine wave
∗2 40 to 60%RH, AC for 1 minute, f= 60Hz
∗3 For 10 seconds

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,

data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”

I

I

surge

DRM

S11MD5T

F

R

T

400 600 V

iso

opr

stg

sol

Rating

S21MD3TV/S21MD4TV

50 mA

6V

0.1

1.2 A

5 000

- 30 to +100 ˚C

- 55 to +125 ˚C
260 ˚C

(

Ta = 25˚C

Unit

A

rms

V

rms

)

S11MD5T/S21MD3TV/S21MD4TV

■ Electro-optical Characteristics

Parameter

Forward

Input

voltage
Reverse current I

Repetitive peak OFF-state current
ON-state

voltage

Output

Holding current I

Critical rate
of rise of OFF­state voltage

Zero-cross
voltage

Minimun trigger current I

Transfer

Isolation resistance R

charac­teristics

Turn-on
time

∗4 S21MD3TV : IF=30mA

S11MD5T/S21MD4TV
S21MD3TV

S11MD5T
S21MD3TV/S21MD4TV

S11MD5T/S21MD4TV

S21MD4TV V

S11MD5T
S21MD3TV - 100

(

Symbol Conditions MIN. TYP. MAX.

V

R

I

DRM

V

H

dV/dt

OX

FT

ISO

t

on

F

T

IF= 20mA

= 30mA

I

F

VR=3V
V

DRM=Rated

IT= 0.1A
VD=6V

V

= 1/ 2 Rated

DRM

Resistance load
IF= 15mA
VD=6V

= 100Ω

R

L

DC500V
40 to 60%RH

= 6V, IF= 20mA

V

D

RL= 100Ω

- 1.2 1.4

--10

--10

-5

-6

- 1.3 2.0

- 1.7 2.5

0.1 1 3.5

100 - ­500 - -S21MD3TV

--35

--10

10

5x10

∗4

- 80 200

11

10

-

-

-50

20S21MD4TV

Ta= 25˚C

Unit

V
A

A
V
V

mA

V/µs
V/µs

V

mA

Ω

µs
µs

µs

)

Fig. 1 RMS ON-state Current vs.

Ambient Temperature

0.10

T

0.05

RMS ON-state current I

0

-

30 0 20406080100

Ambient temperature T

a

(˚C)

Fig. 2 Forward Current vs.

Ambient Temperature

70

60

)

50

mA

(

F

40

30

20

Forward current I

10

0

-

30 0 25 50 75 100 125

Ambient temperature Ta (˚C

)