Photothyristor Coupler
S12MD1V/S12MD3
❈ Lead forming type (I type) and taping reel type (P type) of S12MD1V are also available. (S12MD1VI/S12MDIP
S12MD1V/S12MD3
)
■ Features
1. High RMS ON-state current (IT: MAX.
200mA
)
rms
2. High repetitive peak OFF-state voltage
(V
: MIN. 400V
DRM
3. Trigger current I
)
: MAX. 15mA at RG=
FT
20kΩ
4. For half-wave control •••S12MD1V
For full-wave control ••• S12MD3
5. Recognized by UL, file No. E64380
❈ S12MD1V and S12MD3 are for 100V line
■ Applications
1. ON-OFF operation for a low power load
2. For triggering high power thyristor and
triac
■ Outline Dimensions
S12MD1V
±
0.25
2.54
S12MD1V
Anode
mark
7.12
0.5
±
3.35
S12MD3
±
0.25
2.54
85
S12MD3
1
±
0.3
1.2
9.22
4
6
5
123
0.9
1.2
±
0.5
0.5
0.5
±
3.7
6
7
2
31
±
0.5
Internal connection diagram
0.5
±
6.5
±
0.2
±
0.3
±0.5
3.5
TYP.
0.5
±
0.8
5
Anode
mark
0.85
0.1
0.26
θ : 0 to 13˚
±
0.2
Internal connection diagram
8
±
0.3
0.5
±
3.5
123
±
0.3
7.62
±
0.1
7
2
±
0.3
7.62
(
Unit : mm
456
1 Anode
2 Cathode
3 NC
4 Cathode
5 Anode
6 Gate
θ
6
344
1 4 Anode
2 3 Cathode
5 8 Gate
6 7 Anode/
cathode
)
TYP.
0.5
±
0.1
0.5
±
3.0
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
0.5
±
0.1
0.26
θ : 0 to 13˚
θ
S12MD1V/S12MD3
■ Absolute Maximum Ratings
Parameter Symbol
Input
Forward current I
Reverse voltage V
RMS ON-state current
∗1
Output
Peak one cycle surge current
∗2
Repetitive peak OFF-state voltage
∗2
Repetitive peak reverse voltage V
∗3
Isolation voltage V
Operating temperature T
Storage temperature T
∗4
Soldering temperature T
∗1 50Hz, sine wave ∗3 40 to 60% RH, AC for 1 minute
∗2 RG=20kΩ∗4 For 10 seconds
■ Electro-optical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Input
Output
Transfer-
charac-
teristics
∗5 Applies only to S12MD1V
Forward voltage V
Reverse current I
Repetitive peak OFF-state current
∗5
Repetitive peak reverse current
ON-state voltage
Holding current I
Critical rate of rise of OFF-state voltage
Minimum trigger current I
Isolation resistance R
Turn-on time t
F
R
I
T
I
surge
V
DRM
RRM
iso
opr
stg
sol
IF= 30mA - 1.2 1.4 V
F
VR=3V - - 10
R
I
I
dV/dt
V
DRM
RRM
V
T
H
FT
ISO
on
DRM
V
RRM
IT= 200mA - 1.0 1.4 V
VD= 6V, RG= 20kΩ - 0.3 1 mA
V
DRM
VD= 6V, RL= 100Ω, RG= 20kΩ
DC500V, 40 to 60% RH
VD= 6V, IF= 30mA, RG= 20kΩ ,
RL= 100Ω
Rating
S12MD1V S12MD3
(
Ta =25˚C
)
Unit
50 mA
6V
200
mA
rms
2A
400 V
400 - V
5 000 1 500
V
rms
- 30 to + 100 ˚C
- 40 to + 125 ˚C
260 ˚C
(
Ta = 25˚C
-5
= Rated, RG= 20kΩ --10-6A
= Rated, RG= 20kΩ --10-6A
2
= 1/ Rated, RG= 20kΩ
3--V/µs
- - 15 mA
5x101010
- µs
11
10 60
- Ω
)
A
Fig. 1 RMS ON-state Current vs.
Ambient Temperature
200
)
rms
mA
(
T
100
RMS ON-state current I
0
-
30 0 20406080100
Ambient temperature Ta (˚C
Fig. 2 Forward Current vs.
Ambient Temperature
70
60
)
50
mA
(
F
40
30
20
Forward current I
10
0
-
)
30 0 25 50 75 100 125
Ambient temperature Ta (˚C
S12MD3
S12MD1V
)
S12MD1V/S12MD3
Fig. 3 Forward Current vs. Forward Voltage
500
T
200
)
100
mA
(
F
50
20
10
Forward current I
5
2
1
0 0.5 1.0 1.5 2.0 2.5 3.0
50˚C
Forward voltage VF (V
= 75˚C
a
25˚C
0˚C
- 25˚C
)
Fig. 5 Minimum Trigger Current vs.
Gate Resistance
50
)
mA
20
(
FT
10
5
2
Minimum trigger current I
V
R
T
=6V
D
= 100Ω
L
= 25˚C
a
Fig. 4 Minimum Trigger Current vs.
Ambient Temperature
6
=6V
V
D
R
= 100Ω
L
)
5
mA
(
FT
4
3
2
Minimum trigger current I
1
0
-
30 0 20406080100
Ambient temperature T
10kΩ
=
G
R
20kΩ
50kΩ
(˚C)
a
Fig. 6 Break Over Voltage vs.
Ambient Temperature
600
500
)
V
(
400
BO
300
200
Break over voltage V
100
R
= 10kΩ
G
100kΩ
20kΩ
50kΩ
1
1 2 5 10 20 50 100 200
Gate resistance RG (KΩ
)
Fig. 7 Critical Rate of Rise of OFF-state
Voltage vs. Ambient Temperature
100
50
20
10
)
5
V/ µs
(
2
Critical rate of rise of OFF-state voltage
dV/dt
1
0 20406080100
V
DRM
Ambient temperature Ta (˚C
2
= 1/ •Rated
RG= 10kΩ
20kΩ
50kΩ
)
0
-
30 0 20406080100
Ambient temperature Ta (˚C
Fig. 8 Holding Current vs.
Ambient Temperature
1.0
0.5
)
mA
(
0.2
H
0.1
0.05
Holding current I
0.02
0.01
0 20406080100
Ambient temperature Ta (˚C
V
D
RG= 10kΩ
20kΩ
50kΩ
)
=6V
)
Fig. 9 Repetitive Peak OFF-state Current vs.
Ambient Temperature
-4
10
V
= Rated
)
A
(
DRM
Repetitive peak OFF-state current I
DRM
5
R
= 20kΩ
G
-5
10
5
-6
10
5
-7
10
5
-8
10
5
-9
10
0 20406080100
Ambient temperature T
(˚C)
a
■ Basic Operation Circuit
● S12MD1V
Medium/High Power Thyristor Drive Circuit
S12MD1V/S12MD3
+V
CC
V
IN
16
2
3
5
C
G
4
R
G
Medium/High Power Triac Drive Circuit (Zero-cross Operation
+ V
CC
V
IN
16
2
3
5
R
G
C
G
4
Load
Z
S
: Snubber circuit
Z
S
)
AC 100V
Load
AC 100V
● S12MD3
Low Power Load Drive Circuit
S12MD1V/S12MD3
8
7
C
G
R
G
R
G
6
5
+ V
CC
1
2
3
V
IN
4
Medium/High Power Triac Drive Circuit
+ V
CC
1
2
3
V
IN
● Please refer to the chapter “Precautions for Use”
4
8
7
C
G
R
6
G
R
G
5
C
G
Z
S
Z
S
C
G
(
Page 78 to 93).
Load
AC 100V
: Snubber circuit
Load
AC 100V
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