Sharp S11MS3, S21MS3, S21MS4 Datasheet
S11MS3/S21MS3/S21MS4
S11MS3/
S21MS3/S21MS4
■ Features
1. Ultra-compact, mini-flat package type
(3.6 x 4.4 x 2.0mm
2. Built-in zero-cross circuit
(S21MS4
)
3. High isolation voltage between input and
output (V
iso rms
4. Recognized by UL, file No.E64380
■ Model Line-ups
No built-in
zero-cross circuit
Built-in
zero-cross circuit
■ Applications
1. For triggering of medium/high power
triacs
)
: 3 750V
)
For 100V lines For 200V lines
S11MS3 S21MS3
- S21MS4
High Density Surface Mount Type
Mini-flat Package
Phototriac Coupler
7.0
5.3
±
+0.2
-
0.3
0.7
(
Unit : mm
456
❈
Zero-cross
circuit
+ 0.4
0.5
-
0.2
± 0.05
0.2
■ Outline Dimensions
±
0.25
1.27
Model No.
S
Anode
mark
13
±
0.3
3.6
6˚
1 Anode
3 Cathode
4 Anode/
cathode
❈ Zero-cross circuit for S21MS4
456
0.4
±
0.1
C0.4
Input side
MAX.
0.6
0.2
±
4.4
0.2
±
2.6
0.1
±
0.1
Internal connection
diagram
13
No external connection
5
6 Anode/
cathode
)
■ Absolute Maximum Ratings
Parameter Symbol
Forward current I
Input
Reverse voltage V
∗1
RMS ON-state current I
∗2
Peak one cycle surge current I 0.6 A
Output
Repetitive peak OFF-state voltage
∗3
Isolation voltage V
Operating temperature T
Storage temperatrue T
∗4
Soldering temperature T
∗1 The definition of conduction angle θ of effective ON current IT should be as shown
in the right drawing.
∗2 50Hz sine wave
∗3 40 to 60%RH, AC for 1 minute
∗4 For 10 seconds,
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
F
R
T
surge
V
DRM
iso
opr
stg
sol
Rating
S11MS3 S21MS3/S21MS4
50 mA
0.05 A
400 600 V
3 750
- 30 to +100 ˚C
- 40 to +125 ˚C
260 ˚C
(
Ta = 25˚C
6V
Unit
V
)
θ
T
θ
180˚
1
2
, θ2<=90˚
360˚90˚
0.2mm or more
2 • I
I
T
(A)
rms
rms
0
θ
1
Soldering area
θ
S11MS3/S21MS3/S21MS4
■ Electro-optical Characteristics
Parameter
Input
Output
Transfer
charac-
teristics
Fig. 1 RMS ON-state Current vs.
Ambient Temperature
)
mA
(
RMS ON-state current I
Forward voltage
Reverse current
Repetitive peak OFF-state current
ON-state voltage
Holding current
Critical rate of rise of OFF-state voltage
Zero-cross
voltage
Minimum trigger current
Isolation resistance
S11MS3/S21MS3
rms
T
Turn-on time
60
50
40
30
20
10
S21MS4
S21MS4
(
Ta= 25˚C
Symbol MIN. TYP. MAX. Unit
V
F
I
R
I
DRM
V
T
I
H
dV/dt
V
OX
I
FT
R
ISO
t
on
Conditions
= 20mA
I
F
=3V
V
R
= Rated
V
DRM
= 0.05A
I
T
=6V
V
D
= 1/ • Rated
DRM
2
V
IF= 15mA, Resistance load
= 6V, RL= 100Ω
V
D
DC500V, 40 to 60%RH
= 6V, RL= 100Ω ,
V
D
I
= 20mA
F
- 1.2 1.4 V
--10µA
--1µA
- - 2.5 V
0.1 - 3.5 mA
1 000
100 - V/µs
- - 35 V
- - 10 mA
5x101010
- - 100
--50
11
- Ω
µs
Fig. 2 Forward Current vs.
Ambient Temperature
60
50
)
mA
40
(
F
30
20
Forward current I
10
)
0
-
30 0 50 100
Ambient temperature Ta (˚C
Fig. 3 Forward Current vs.
Forward Voltage
200
100
T
= 100˚C
)
mA
(
F
Forward current I
a
50
20
10
75˚C
50˚C
5
2
1
0 0.5 1.0 1.5 2.5 3.02.0
Forward voltage VF (V
25˚C
0˚C
-30˚C
0
-
30
)
0 50 100
Ambient temperature Ta (˚C
)
Fig. 4-a Minimum Trigger Current vs.
Ambient Temperature
12
10
)
mA
(
8
FT
6
4
2
Minimum trigger current I
0
-
)
30
(S11MS3/S21MS3
V
R
Ambient temperature Ta (˚C
=6V
D
= 100Ω
L
)
)
100806040200
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