Sharp S11MD4T, S11MD4V Datasheet

Phototriac Coupler with

S11MD4V/S11MD4T

Built-in Zero-cross Circuit

S11MD4V/S11MD4T

■ Features

1. Pin No. 5 completely molded for external
noise resistance (S11MD4T

2. Dual-in-line package type (S11MD4V

)

)

3. Built-in zero-cross circuit

4. High repetitive peak OFF-state voltage

(V

: MIN. 400V

DRM

)

5. Isolation voltage between input and output
V

: 5 000V

iso

(S11MD4V/S11MD4T

rms

6. Recognized by UL, file No.E64380
❈ S11MD4V and S11MD4T are for 100V

lines.

■ Applications

1. For triggering medium/high power triacs

■ Absolute Maximum Ratings

Parameter

Forward current I

Input

Reverse voltage V
RMS ON-state

current

∗1

Peak one cycle

Output

surge current

Repetitive peak
OFF-state voltage

*2

Isolation voltage V
Operating temperature T
Storage temperature T

∗3

Soldering temperature T

Symbol

I

I

surge

V

DRM

iso

opr

stg

sol

Rating

S11MD4V/S11MD4T

F

R

T

50 mA

6V

0.1

1.2 A

400 V

5 000

-30 to +100

-55 to +125
260 ˚C

)

(

Ta = 25˚C

Unit

A

V

■ Outline Dimensions

S11MD4V

Anode
mark

S11MD4T

Anode
mark

)

rms

rms

˚C
˚C

∗1 50Hz sine wave
∗2 40 to 60%RH, AC for 1 minute,

f= 60Hz

0.5

±

3.35

2.54

0.5

±

3.35

±

0.25

2.54
6

5

S11MD4V

2

1

±

0.5

7.12

0.5

±

3.7

S11MD4T

2

1

±

0.25

±

0.5

7.12

0.5

±

3.7

4

3

0.5

46

3

0.5

0.9

1.2

0.9

1.2

0.5

±

6.5

±

0.2

±

0.3

0.5

±

3.5

TYP.

0.5

±

0.1

0.5

±

6.5

±

0.2

±

0.3

0.5

±

3.5

TYP.

0.5

±

0.1

Internal connection
diagram

1

±

7.62

±

0.1

0.26

θ : 0 to 13˚
Internal connection

diagram

123

7.62

±

0.26

θ : 0 to 13˚

(

Unit : mm

456

Zero-cross
circuit

2

3

1 Anode
2 Cathode

46

θ

θ

3 NC
4 Anode/

Cathode

5 No exter-

nal con­ nection

6 Anode/

Cathode

Zero-cross
circuit

1 Anode
2 Cathode
3 NC
4 Anode/

Cathode

6 Anode/

Cathode

0.3

±

0.3

0.1

)

∗3 For 10 seconds

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,

data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”

S11MD4V/S11MD4T

■ Electro-optical Characteristics

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Input

Output

Transfer

charac-

teristics

Fig. 1 RMS ON-state Current vs.
Ambient Temperature

)

0.10

A

(

T rms

0.05

Forward voltage V
Reverse current I

Repetitive peak OFF-state
current

ON-state voltage V
Holding current I

Critical rate of rise of
OFF-state voltage

Zero-cross voltage V
Minimum trigger current I
Isolation resistance R
Turn-on time t

= 20mA - 1.2 1.4 V

FIF

VR=3V - - 10

R

I

DRMVDRM

TIT

H

dV/dt

OX

FT

ISO

on

= Rated

= 0.1A - 1.7 2.5 V

VD= 6V 0.1 3.5 mA
V

= 1/ • Rated

2

DRM

Resistance load, IF= 15mA
VD= 6V. RL= 100Ω - - 10 mA
DC500V, 40 to 60%RH
VD= 6V, RL= 100Ω , IF= 20mA

--10-6A

1.0

100 - - V/µ s

- - 35 V

5x101010

11

-2050µs

Fig. 2 Forward Current vs.
Ambient Temperature

70

60

)

50

mA

(

F

40

30

(

Ta = 25˚C

-5

- Ω

)

A

RMS ON-state current I

0

-

30 0 20406080100

Ambient temperature Ta (˚C

)

Fig. 3 Forward Current vs. Forward Voltage

200

100

Ta= 100˚C

50

)
mA

(

F

20

10

Forward current I

5
2

1

0 0.5 1.0 1.5 2.5 3.02.0

75˚C
50˚C

Forward voltage VF (V

-

25˚C

0˚C

30˚C

)

20

Forward current I

10

0

-

30 0 25 50 75 100 125

Ambient temperature T

)

(˚C

a

Fig. 4 Minimum Trigger Current vs.
Ambient Temperature

14

12

)

mA

(

10

FT

8

6

4

Minimum trigger current I

2

0

-

30 0 20406080100

Ambient temperature Ta (˚C

VD=6V

RL= 100Ω

)