SHARP PC367 User Manual
PC367
PC367
■ Rank Table
■ Absolute Maximum Ratings
■ Outline Dimensions
(Unit : mm)
Low Input Current Type
Photocoupler
1. Programmable controllers
2. Facsimiles
3. Telephones
■ Features
■ Applications
1. Low input current type (IF=0.5mA)
2. High resistance to noise due to high common mode rejection
voltage (CMR:MIN. 10kV/µs)
3. Mini-flat package
4. Isolation voltage (Viso:3 750Vrms)
5. Recognized by UL, file No. 64380
*1 Pulse width<=100µs, Duty ratio=0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10 seconds
Parameter Symbol Rating Unit
Forward current
Peak forward current
IF
IFM
10
200
mA
mA
mA
Reverse voltage
Input
Output
VR
V
V
Power dissipation
Collector-emitter voltage
P 15
Collector power dissipation
Collector current
Total power dissipation
150
70
50
mW
mW
mW
P
tot
IC
PC
VCEO
V
Emitter-collector voltage
6
V
ECO
Viso kVrms
170
Operating temperature
Topr
−40 to +125
−30 to +100
°C
°C
Storage temperature
Isolation voltage
T
stg
*2
*3
*1
Soldering temperature
Tsol
260
3.75
°C
(Ta=25°C)
6
3 6 7
4 3
1 2
1
2
4
3
4.4
±0.2
5.3
±0.3
2.6
±0.2
0.1
±0.1
3.6
±0.3
2.54
±0.25
0.4
±0.1
0.5
+0.4
−0.2
7.0
+0.2
−0.7
Anode mark
Epoxy resin
45°
6°
Internal connection diagram
0.2
±0.05
1
2
3
4
AnodeAnode
Cathode
Emitter
Collector
0.2mm or more
Soldering area
Model No. Rank mark Ic (mA) Conditions
PC367NT
PC367N1T
PC367N2T
A, B or no mark
A
B
0.5 to 2.5
0.75 to 1.5
1.0 to 2.0
I
F=0.5mA
VCE=5V
T
a=25°C
Notice In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Internet Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/
查询PC367供应商
PC367
■ Electro-optical Characteristics
Fig.2 Forward Current vs. Ambient
Temperature
Fig.1 Test Circuit for Common Mode Rejection Voltage
Parameter Symbol
MIN.
TYP. MAX. Unit
Forward voltage
Reverse current
Collector current
Isolation resistance
Floating capacitance
Response time
Common mode rejection voltage
Terminal capacitance
Collector dark current
Emitter-collector breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Rise time
Fall time
V
F
IR
Ct
ICEO
BVCEO
BVECO
RISO
Cf
IC
VCE (sat)
tr
tf
CMR
Conditions
I
F=10mA
I
F=0.5mA, VCE=5V
I
F=10mA, IC=1mA
V=0, f=1kHz
V
CE=50V, IF=0
I
C=0.1mA, IF=0
I
E=10µA, IF=0
DC500V 40 to 60%RH
V=0, f=1MHz
V
CE=2V, IC=2mA, RL=100Ω
Ta=25°C, R
L=470Ω, VCM=1.5kV (peak),
I
F=0mA, VCC=9V, Vnp=100mV
1.4
V
V
R=4V
−
−
−
−
−
−
70
6
0.5
5×10
10
1×10
11
30
1.2
−
−
2.5
250
−
0.6
1.0
−
4
18
−
3
18
100
−
10
−
−
10
V
−
−
−
V
V
−
0.2
−
µA
µs
µs
kV/µs
mA
pF
pF
nA
Ω
(Ta=25°C)
InputOutputTransfer characteristics
*4 Refer to Fig.1
*4
V
np
1)
1) V
cp
: Voltage which is generated by displacement current in floating
capacitance between primary and secondary side.
V
cp
V
CM
V
CM :
High wave
pulse
R
L
=470Ω
V
CC
=9V
V
CM
R
L
V
CC
(dV/dt)
V
O
V
O
(Vcp Nearly = dV/dt×Cf×RL)
Forward current I
F
(mA)
Ambient temperature Ta (°C)
0
10
5
−30 0 25 50 75 100 125
Fig.3
Diode Power Dissipation vs. Ambient
Temperature
Diode power dissipation P (mW)
Ambient temperature Ta (°C)
0
15
10
5
−30 0 25 50 75 100 125
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