Sharp LZ2426J Datasheet

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DESCRIPTION

The LZ2426J is a 1/4-type (4.5 mm) solid-state image sensor that consists of PN photo-diodes and CCDs (charge-coupled devices) driven by dualpower-supply. With approximately 320 000 pixels (542 horizontal x 582 vertical), the sensor provides a stable high-resolution B/W normal or mirror image.

FEATURES

• Number of effective pixels : 512 (H) x 582 (V)

• Number of optical black pixels – Horizontal : 2 front and 28 rear

• Pixel pitch : 7.2 µm (H) x 4.7 µm (V)

• Low fixed-pattern noise and lag

• No burn-in and no image distortion

• Blooming suppression structure

• Built-in output amplifier

• Built-in pulse mix circuit

• Variable electronic shutter (1/50 to 1/10 000 s)

• Normal or mirror image output available from common output pin

• Compatible with CCIR standard

• Package : 14-pin half-pitch WDIP [Plastic] (WDIP014-P-0400A) Row space : 10.16 mm

PIN CONNECTIONS

PRECAUTIONS

• The exit pupil position of lens should be more than 20 mm from the top surface of the CCD.

• Refer to "PRECAUTIONS FOR CCD AREA

SENSORS" for details.

LZ2426J

Dual-power-supply (5 V/12 V) Operation

1/4-type B/W CCD Area Sensor with 320 k Pixels

1ØRS

2GND

3OS

4OD

5Ø

H2B

6ØH2

7ØH1B

OFD

ØV2

ØV1

ØV4

ØV3

ØH1

14-PIN HALF-PITCH WDIP

TOP VIEW

(WDIP014-P-0400A)

LZ2426J

PIN DESCRIPTION

SYMBOL PIN NAME

OD Output transistor drain OS Output signals Ø

RS Reset transistor clock

V1, ØV2, ØV3, ØV4 Vertical shift register clock

ØH1, ØH2, ØH1B, ØH2B Horizontal shift register clock

OFD Overflow drain GND Ground

Transfer gate clockØ

NOTE

NOTE :

1. ØV1-ØV4 : Input the clock through a 0.1 µF capacitor.

ABSOLUTE MAXIMUM RATINGS (TA = +25 ˚C)

PARAMETER SYMBOL RATING UNIT

Output transistor drain voltage V

OD 0 to +15 V

Overflow drain voltage V

OFD 0 to +30 V

Reset gate clock voltage V

ØRS –0.3 to +15 V

Vertical shift register clock voltage VØV 0 to +7.5 V Horizontal shift register clock voltage V

ØH –0.3 to +7.5 V

Transfer gate clock voltage VØTG –0.3 to +15 V Storage temperature T

STG –40 to +85 ˚C

Ambient operating temperature TOPR –20 to +70 ˚C

LZ2426J

RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE

Ambient operating temperature T

OPR 25.0 ˚C

Output transistor drain voltage V

OD 12.0 12.5 13.0 V

Ground GND 0.0 V

Horizontal shift register clock

LOW level

ØH1L, VØH2L

VØH1BL, VØH2BL

–0.05 0.0 0.05 V

HIGH level

ØH1H, VØH2H

VØH1BH, VØH2BH

4.7 5.0 5.5 V

Reset gate clock

LOW level V

ØRSL 0.0

Vertical shift register clock frequency

ØV1, fØV2

fØV3, fØV4

15.63 kHz

Horizontal shift register clock frequency

ØH1, fØH2

fØH1B, fØH2B

9.66 MHz

Reset gate clock frequency f

ØRS 9.66 MHz

NOTES :

1. When DC voltage is applied, shutter speed is 1/50-second.

2. When pulse is applied, shutter speed is less than 1/50-second.

* To apply power, first connect GND and then turn on V

OD and then turn on other powers and pulses. Do not connect the

device to or disconnect it from the plug socket while power is being applied.

1V12.02.7VOFDOverflow drain

voltage

V0.050.0–0.05V

ØTGLTransfer gate

clock

LOW level HIGH level VØTGH 12.0 12.5 13.0 V

p-p level

Vertical shift register clock

ØV1, VØV2

VØV3, VØV4

4.7 5.0 5.5 V

When DC is applied

VOD– 9.0

3ns18.013.08.0tw

1, tw2Horizontal shift register clock phase

ØH1, ØH2

ØH1B, ØH2B : Normal image output mode Ø

H1B, ØH2B : Mirror image output mode

tw1 tw2

When pulse is applied p-p level

VØOFD 12.0 12.5 13.0 V 2

V9.5

VOD– 4.5

VØRSHHIGH level

LZ2426J

CHARACTERISTICS (Drive method : Field accumulation)

A = +25 ˚C, Operating conditions : The typical values specified in "

RECOMMENDED OPERATING CONDITIONS

Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE

Standard output voltage V

O 150 mV 2

Photo response non-uniformity PRNU 15 % 3 Saturation output voltage V

SAT 450 mV 4

Dark output voltage V

DARK 0.5 mV 1, 5

Dark signal non-uniformity DSNU 0.5 mV 1, 6 Sensitivity R 400 mV 7 Smear ratio SMR –84 dB 8 Image lag AI 1.0 % 9 Blooming suppression ratio ABL 1 000 10 Output transistor drain current I

OD 4.0 8.0 mA

Output impedance RO 400 $

NOTES :

•VOFD should be adjusted to the minimum voltage such that ABL satisfy the specification, or to the value displayed on the device.

1. T

A = +60 ˚C

2. The average output voltage under uniform illumination. The standard exposure conditions are defined as when Vo is 150 mV.

3. The image area is divided into 10 x 10 segments under the standard exposure conditions. Each segment's voltage is the average output voltage of all pixels within the segment. PRNU is defined by (Vmax – Vmin)/Vo, where Vmax and Vmin are the maximum and minimum values of each segment's voltage respectively.

4. The image area is divided into 10 x 10 segments. Each segment's voltage is the average output voltage of all pixels within the segment. V

SAT is the minimum

segment's voltage under 10 times exposure of the standard exposure conditions.

5. The average output voltage under non-exposure conditions.

6. The image area is divided into 10 x 10 segments under non-exposure conditions. DSNU is defined by (Vdmax – Vdmin), where Vdmax and Vdmin are the maximum and minimum values of each segment's voltage respectively.

7. The average output voltage when a 1 000 lux light source with a 90% reflector is imaged by a lens of F4, f50 mm.

8. The sensor is exposed only in the central area of V/10 square with a lens at F4, where V is the vertical image size. SMR is defined by the ratio of the output voltage detected during the vertical blanking period to the maximum output voltage in the V/10 square.

9. The sensor is exposed at the exposure level corresponding to the standard conditions. AI is defined by the ratio of the output voltage measured at the 1st field during the non-exposure period to the standard output voltage.

10. The sensor is exposed only in the central area of V/10 square, where V is the vertical image size. ABL is defined by the ratio of the exposure at the standard conditions to the exposure at a point where blooming is observed.

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