Sharp LZ2423H Datasheet

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1

DESCRIPTION

The LZ2423H is a 1/4-type (4.5 mm) solid-state image sensor that consists of PN photo-diodes and CCDs (charge-coupled devices). With approximately 320 000 pixels (542 horizontal x 582 vertical), the sensor provides a stable high-resolution color image.

FEATURES

• Number of effective pixels : 512 (H) x 582 (V)
• Number of optical black pixels – Horizontal : 2 front and 28 rear
• Pixel pitch : 7.2 µm (H) x 4.7 µm (V)
• Mg, G, Cy, and Ye complementary color filters
• Low fixed-pattern noise and lag
• No burn-in and no image distortion
• Blooming suppression structure
• Built-in output amplifier
• Built-in overflow drain voltage circuit and reset gate voltage circuit
• Horizontal shift register clock and reset gate clock voltage : 3.3 V (TYP.)
• Variable electronic shutter (1/50 to 1/10 000 s)
• Compatible with PAL standard
• Package : 14-pin half-pitch WDIP [Plastic] (WDIP014-P-0400A) Row space : 10.16 mm

PIN CONNECTIONS

PRECAUTIONS

• The exit pupil position of lens should be more than 25 mm from the top surface of the CCD.
• Refer to "PRECAUTIONS FOR CCD AREA
SENSORS" for details.
LZ2423H
1/4-type Color CCD Area Sensor
with 320 k Pixels
LZ2423H
1OD
2Ø
RS
3NC1
4OS
5NC
2
6ØH2
7ØH1
14
13
12
11
10
9
8
GND
Ø
V4
ØV3
ØV2
ØV1
PW
OFD
14-PIN HALF-PITCH WDIP
TOP VIEW
(WDIP014-P-0400A)
LZ2423H
2

PIN DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

(TA = +25 ˚C)
SYMBOL PIN NAME
OD Output transistor drain OS Output signals ØRS Reset transistor clock Ø
V1, ØV2, ØV3, ØV4 Vertical shift register clock
ØH1, ØH2 Horizontal shift register clock
PW P-well GND Ground NC
1, NC2 No connection
PARAMETER SYMBOL RATING UNIT
Output transistor drain voltage V
OD 0 to +18 V
Reset gate clock voltage V
ØRS Internal output V
Vertical shift register clock voltage V
ØV –10.5 to +17.5 V
Horizontal shift register clock voltage V
ØH –0.3 to +12 V
Voltage difference between P-well and vertical clock VPW-VØV –28 to 0 V
Storage temperature T
STG –40 to +85 ˚C
Ambient operating temperature T
OPR –20 to +70 ˚C
2
NOTE
NOTES :
1. Do not connect to DC voltage directly. When OFD is connected to GND, connect VOD to GND. Overflow drain clock is applied below 26 Vp-p.
2. Do not connect to DC voltage directly. When Ø
RS is connected to GND, connect VOD to GND. Reset gate clock is
applied below 8 Vp-p.
3. When clock width is below 10 µs, and clock duty factor is below 0.1%, voltage difference between vertical clocks will be below 27 V.
Overflow drainOFD
1VInternal outputV
OFDOverflow drain voltage
3V0 to +15VØV-VØVVoltage difference between vertical clocks
3
LZ2423H

RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE
Ambient operating temperature T
OPR 25.0 ˚C
Output transistor drain voltage V
OD 14.55 15.0 15.45 V
NOTES :
• Connect NC1 and NC2 to GND directly or through a capacitor larger than 0.047 µF.
1. Use the circuit parameter indicated in "SYSTEM CONFIGURATION EXAMPLE", and do not connect to DC voltage directly.
2. V
PW is set below VØVL that is low level of vertical shift register clock, or is used with the same power supply that is connected
to V
L of V driver IC.
* To apply power, first connect GND and then turn on V
OD. After turning on VOD, turn on PW first and then turn on other powers
and pulses. Do not connect the device to or disconnect it from the plug socket while power is being applied.
1V23.521.5VØOFD
Overflow drain clock
P-well voltage VPW –9.0 VØVL V2
Ground GND 0.0 V
V–7.5–8.0–8.5
V
ØV1L, VØV2L
VØV3L, VØV4L
Vertical shift register clock
LOW level
INTERMEDIATE level
HIGH level
V
ØV1I, VØV2I
VØV3I, VØV4I
VØV1H, VØV3H 14.55
0.0
15.0 15.45VV
LOW levelHorizontal shift
register clock
V
ØH1L, VØH2L –0.05 0.0 0.05 V
HIGH level VØH1H, VØH2H 3.0 3.3 5.25 V
1V5.253.33.3V
ØRSReset gate clock p-p level
Reset gate clock frequency f
ØRS 9.66 MHz
Horizontal shift register clock frequency fØH1, fØH2 9.66 MHz
Vertical shift register clock frequency
f
ØV1, fØV2
fØV3, fØV4
15.63 kHz
p-p level
LZ2423H
4

CHARACTERISTICS (Drive method : Field accumulation)

(T
A = +25 ˚C, Operating conditions : The typical values specified in "
RECOMMENDED OPERATING CONDITIONS
".
Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE
Standard output voltage V
O 150 mV 2
Photo response non-uniformity PRNU 15 % 3 Saturation output voltage V
SAT 650 mV 4
Dark output voltage V
DARK 0.5 3.0 mV 1, 5
Dark signal non-uniformity DSNU 0.5 2.0 mV 1, 6 Sensitivity R 380 500 mV 7 Smear ratio SMR –90 –80 dB 8 Image lag AI 1.0 % 9 Blooming suppression ratio ABL 1 000 10 Output transistor drain current I
OD 4.0 8.0 mA
Output impedance RO 350 $ Vector breakup 7.0 ˚, % 11 Line crawling 3.0 % 12 Luminance flicker 2.0 % 13
NOTES :
• Within the recommended operating conditions of VOD, V
OFD of the internal output satisfies with ABL larger than
1 000 times exposure of the standard exposure conditions, and V
SAT larger than 650 mV.
1. T
A = +60 ˚C
2. The average output voltage under uniform illumination. The standard exposure conditions are defined as when Vo is 150 mV.
3. The image area is divided into 10 x 10 segments under the standard exposure conditions. Each segment's voltage is the average output voltage of all pixels within the segment. PRNU is defined by (Vmax – Vmin)/Vo, where Vmax and Vmin are the maximum and minimum values of each segment's voltage respectively.
4. The image area is divided into 10 x 10 segments. Each segment's voltage is the average output voltage of all pixels within the segment. V
SAT is the minimum
segment's voltage under 10 times exposure of the standard exposure conditions.
5. The average output voltage under non-exposure conditions.
6. The image area is divided into 10 x 10 segments under non-exposure conditions. DSNU is defined by (Vdmax – Vdmin), where Vdmax and Vdmin are the maximum and minimum values of each segment's voltage respectively.
7. The average output voltage when a 1 000 lux light source with a 90% reflector is imaged by a lens of F4, f50 mm.
8. The sensor is exposed only in the central area of V/10 square with a lens at F4, where V is the vertical image size. SMR is defined by the ratio of the output voltage detected during the vertical blanking period to the maximum output voltage in the V/10 square.
9. The sensor is exposed at the exposure level corresponding to the standard conditions. AI is defined by the ratio of the output voltage measured at the 1st field during the non-exposure period to the standard output voltage.
10. The sensor is exposed only in the central area of V/10 square, where V is the vertical image size. ABL is defined by the ratio of the exposure at the standard conditions to the exposure at a point where blooming is observed.
11. Observed with a vector scope when the color bar chart is imaged under the standard exposure conditions.
12. The difference between the average output voltage of the (Mg + Ye), (G + Cy) line and that of the (Mg + Cy), (G + Ye) line under the standard exposure conditions.
13. The difference between the average output voltage of the odd field and that of the even field under the standard exposure conditions.
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