Sharp LZ2354BJ, LZ2353B Datasheet

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DESCRIPTION

The LZ2353B/LZ2354BJ are 1/3-type (6.0 mm) solid-state image sensors that consist of PN photodiodes and CCDs (charge-coupled devices). With approximately 410 000 pixels (811 horizontal x 507 vertical), the sensor provides a stable high-resolution color (LZ2353B)/B/W (LZ2354BJ) image.

FEATURES

• Number of effective pixels : 768 (H) x 494 (V)

• Number of optical black pixels – Horizontal : 3 front and 40 rear – Vertical : 11 front and 2 rear

• Pixel pitch : 6.4 µm (H) x 7.5 µm (V)

• Mg, G, Cy, and Ye complementary color filters (For LZ2353B)

• Low fixed-pattern noise and lag

• No burn-in and no image distortion

• Blooming suppression structure

• Built-in output amplifier

• Variable electronic shutter (1/60 to 1/10 000 s)

• Compatible with NTSC standard (LZ2353B)/ EIA standard (LZ2354BJ)

• Package : 16-pin half-pitch WDIP [Ceramic] (WDIP016-N-0450) Row space : 11.43 mm

COMPARISON TABLE

PIN CONNECTIONS

PRECAUTIONS

• The exit pupil position of lens should be more than 25 mm (LZ2353B)/20 mm (LZ2354BJ) from the top surface of the CCD.

• Refer to "PRECAUTIONS FOR CCD AREA

SENSORS" for details.

LZ2353B/LZ2354BJ

LZ2353B/ LZ2354BJ

1/3-type CCD Area Sensors

with 410 k Pixels

1ØV4

2ØV3

3ØV2

4ØV1

5GND

6NC

7NC2

9OS

ØH1

ØLH1

ØRS

OFD

GND

16-PIN HALF-PITCH WDIP

TOP VIEW

(WDIP016-N-0450)

Characteristics

TV standard

LZ2354BJ

EIA standard (B/W)

LZ2353B

NTSC standard (Color)

Refer to each following specification.

LZ2353B/LZ2354BJ

PIN DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

(TA = +25 ˚C)

SYMBOL PIN NAME

OD Output transistor drain OS Output signals ØRS Reset transistor clock Ø

V1, ØV2, ØV3, ØV4 Vertical shift register clock

ØH1, ØH2 Horizontal shift register clock Ø

LH1 Horizontal shift register final stage clock

PW P-well GND Ground NC

1, NC2 No connection

PARAMETER SYMBOL RATING UNIT

Output transistor drain voltage V

OD 0 to +18 V

Reset gate clock voltage Vertical shift register clock voltage Horizontal shift register clock voltage Horizontal shift register final stage clock voltage Voltage difference between P-well and vertical clock V

PW-VØV –28 to 0 V

Storage temperature T

STG –40 to +85 ˚C

Ambient operating temperature TOPR –20 to +70 ˚C

NOTE

NOTE :

1. The OFD clock ØOFD is excluded.

Overflow drainOFD

Overflow drain voltage

ØV VPW to +18 V

ØH –0.3 to +18 V

ØLH –0.3 to +18 V

OFD 0 to +55 V

V–0.3 to +18V

ØRS

LZ2353B/LZ2354BJ

RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE

Ambient operating temperature T

OPR 25.0 ˚C

Output transistor drain voltage V

OD 14.5 15.0 16.0 V

Overflow drain voltage

When DC is applied VOFD 5.0 19.0 V 1 When pulse is applied p-p level

VØOFD 21.5 V 2 Ground GND 0.0 V P-well voltage V

PW –10.0 VØVL V

Vertical shift register clock

LOW level

VØV1L, VØV2L VØV3L, VØV4L

–9.5 –9.0 –7.5 V

INTERMEDIATE level

ØV1I, VØV2I

VØV3I, VØV4I

0.0 V

HIGH level V

ØV1H, VØV3H 14.5 15.0 17.0 V

Horizontal shift register clock

LOW level VØH1L, VØH2L –0.05 0.0 0.05 V

Reset gate clock

LOW level V

ØRSL 0.0

– 14.0

HIGH level V

ØRSH

VOD – 9.5

10.0 V

Vertical shift register clock frequency

ØV1, fØV2

fØV3, fØV4

15.73 kHz

Horizontal shift register clock frequency f

ØH1, fØH2, fØLH1 14.32 MHz

Reset gate clock frequency fØRS 14.32 MHz

NOTES :

• Connect NC1 and NC2 to GND directly or through a capacitor larger than 0.047 µF.

1. When DC voltage is applied, shutter speed is 1/60-second.

2. When pulse is applied, shutter speed is less than 1/60-second.

* To apply power, first connect GND and then turn on V

OFD. After turning on VOFD, turn on PW first and then turn on other

powers and pulses. Do not connect the device to or disconnect it from the plug socket while power is being applied.

HIGH level VØH1H, VØH2H 4.7 5.0 6.0 V

V6.05.04.7V

ØLH1HHIGH level

V0.050.0–0.05V

ØLH1LLOW level

Horizontal shift register final stage clock

LZ2353B/LZ2354BJ

CHARACTERISTICS FOR LZ2353B (Drive method : Field accumulation)

A = +25 ˚C, Operating conditions : The typical values specified in "

RECOMMENDED OPERATING CONDITIONS

Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE

Standard output voltage V

O 150 mV 2

Photo response non-uniformity PRNU 10 % 3 Saturation output voltage V

SAT 700 mV 4

Dark output voltage V

DARK 0.5 3.0 mV 1, 5

Dark signal non-uniformity DSNU 0.5 2.0 mV 1, 6 Sensitivity R 260 350 mV 7 Smear ratio SMR –84 –76 dB 8 Image lag AI 1.0 % 9 Blooming suppression ratio ABL 1 000 10 Output transistor drain current I

OD 4.0 8.0 mA

Output impedance R

O 350 $

Vector breakup 5.0 ˚, % 13 Line crawling 1.5 % 14 Luminance flicker 2.0 % 15

NOTES :

•VOFD should be adjusted to the minimum voltage such that ABL satisfy the specification, or to the value displayed on the device.

1. T

A = +60 ˚C

2. The average output voltage under uniform illumination. The standard exposure conditions are defined as when Vo is 150 mV.

3. The image area is divided into 10 x 10 segments under the standard exposure conditions. Each segment's voltage is the average output voltage of all pixels within the segment. PRNU is defined by (Vmax – Vmin)/Vo, where Vmax and Vmin are the maximum and minimum values of each segment's voltage respectively.

4. The image area is divided into 10 x 10 segments. Each segment's voltage is the average output voltage of all pixels within the segment. V

SAT is the minimum

segment's voltage under 10 times exposure of the standard exposure conditions.

5. The average output voltage under non-exposure conditions.

6. The image area is divided into 10 x 10 segments under non-exposure conditions. DSNU is defined by (Vdmax – Vdmin), where Vdmax and Vdmin are the maximum and minimum values of each segment's voltage respectively.

7. The average output voltage when a 1 000 lux light source with a 90% reflector is imaged by a lens of F4, f50 mm.

8. The sensor is exposed only in the central area of V/10 square with a lens at F4, where V is the vertical image size. SMR is defined by the ratio of the output voltage detected during the vertical blanking period to the maximum output voltage in the V/10 square.

9. The sensor is exposed at the exposure level corresponding to the standard conditions. AI is defined by the ratio of the output voltage measured at the 1st field during the non-exposure period to the standard output voltage.

10. The sensor is exposed only in the central area of V/10 square, where V is the vertical image size. ABL is defined by the ratio of the exposure at the standard conditions to the exposure at a point where blooming is observed.

11. The RMS value of the dark noise (after CDS). (100 kHz to 4.2 MHz, SC trap on.)

12. The difference of the average output voltage between the effective area and the OB area under non-exposure conditions.

13. Observed with a vector scope when the color bar chart is imaged under the standard exposure conditions.

14. The difference between the average output voltage of the (Mg + Ye), (G + Cy) line and that of the (Mg + Cy), (G + Ye) line under the standard exposure conditions.

15. The difference between the average output voltage of the odd field and that of the even field under the standard exposure conditions.

1, 12mV1.0OB difference in level

11mV0.30.2V

NOISEDark noise

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