Sharp LZ2324HJ, LZ2323H5 Datasheet

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DESCRIPTION

The LZ2323H5/LZ2324HJ are 1/3-type (6.0 mm) solid-state image sensors that consist of PN photodiodes and CCDs (charge-coupled devices). With approximately 320 000 pixels (542 horizontal x 582 vertical), the sensor provides a stable high-resolution color (LZ2323H5)/B/W (LZ2324HJ) image.

FEATURES

• Number of effective pixels : 512 (H) x 582 (V)

• Number of optical black pixels – Horizontal : 2 front and 28 rear

• Pixel pitch : 9.6 µm (H) x 6.3 µm (V)

• Mg, G, Cy, and Ye complementary color filters (For LZ2323H5)

• Low fixed-pattern noise and lag

• No burn-in and no image distortion

• Blooming suppression structure

• Built-in output amplifier

• Variable electronic shutter (1/50 to 1/10 000 s)

• Compatible with PAL standard (LZ2323H5)/ CCIR standard (LZ2324HJ)

• Package : 16-pin shrink-pitch WDIP [Ceramic] (WDIP016-N-0500C) Row space : 12.70 mm

COMPARISON TABLE

PIN CONNECTIONS

PRECAUTIONS

• The exit pupil position of lens should be more than 25 mm (LZ2323H5)/20 mm (LZ2324HJ) from the top surface of the CCD.

• Refer to "PRECAUTIONS FOR CCD AREA

SENSORS" for details.

LZ2323H5/LZ2324HJ

LZ2323H5/ LZ2324HJ

1/3-type CCD Area Sensors

with 320 k Pixels

1OD

2Ø

3RD

4OS

5NC

6NC2

7ØH2

9Ø

GND

ØV3

ØV2

ØV1

OFD

16-PIN SHRINK-PITCH WDIP

TOP VIEW

(WDIP016-N-0500C)

Characteristics

TV standard

LZ2324HJ

CCIR standard (B/W)

LZ2323H5

PAL standard (Color)

Refer to each following specification.

LZ2323H5/LZ2324HJ

PIN DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

(TA = +25 ˚C)

SYMBOL PIN NAME

RD Reset transistor drain OD Output transistor drain OS Output signals Ø

RS Reset transistor clock

ØV1, ØV2, ØV3, ØV4 Vertical shift register clock Ø

H1, ØH2 Horizontal shift register clock

OFD Overflow drain PW P-well GND Ground T

1 Test pin

1, NC2 No connection

PARAMETER SYMBOL RATING UNIT

Output transistor drain voltage V

OD 0 to +18 V

Reset transistor drain voltage V

RD 0 to +18 V

Overflow drain voltage VOFD 0 to +55 V Test pin, T

1 VT1 0 to +18 V

Reset gate clock voltage V

ØRS –0.3 to +18 V

Vertical shift register clock voltage VØV –9.0 to +18 V Horizontal shift register clock voltage V

ØH –0.3 to +18 V

Voltage difference between P-well and vertical clock VPW-VØV –27 to 0 V Storage temperature T

STG –40 to +85 ˚C

Ambient operating temperature T

OPR –20 to +70 ˚C

NOTE

NOTE :

1. The OFD clock ØOFD is excluded.

LZ2323H5/LZ2324HJ

RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE

Ambient operating temperature T

OPR 25.0 ˚C

Output transistor drain voltage V

OD 14.5 15.0 16.0 V

Reset transistor drain voltage VRD VOD V Overflow drain voltage

When DC is applied V

OFD 5.0 19.0 V 1

When pulse is applied p-p level

VØOFD 21.5 V 2 Ground GND 0.0 V P-well voltage V

PW –9.0 VØVL V

Test pin, T

1 VT1 VOD V

Vertical shift register clock

LOW level

ØV1L, VØV2L

VØV3L, VØV4L

–8.5 –8.0 –7.5 V

INTERMEDIATE level

ØV1I, VØV2I

VØV3I, VØV4I

0.0 V

HIGH level V

ØV1H, VØV3H 14.5 15.0 17.0 V

Horizontal shift register clock

LOW level V

ØH1L, VØH2L –0.05 0.0 0.05 V

HIGH level V

ØH1H, VØH2H

4.7

5.0 6.0 V

Reset gate clock

LOW level V

ØRSL 0.0

– 13.0

HIGH level V

ØRSH

VRD – 8.5

9.5 V

Vertical shift register clock frequency

ØV1, fØV2

fØV3, fØV4

15.63 kHz

Horizontal shift register clock frequency f

ØH1, fØH2 9.66 MHz

Reset gate clock frequency fØRS 9.66 MHz

LZ2323H5 LZ2324HJ 4.5

NOTES :

• Connect NC1 and NC2 to GND directly or through a capacitor larger than 0.047 µF.

1. When DC voltage is applied, shutter speed is 1/50-second.

2. When pulse is applied, shutter speed is less than 1/50-second.

* To apply power, first connect GND and then turn on V

OFD. After turning on VOFD, turn on PW first and then turn on other

powers and pulses. Do not connect the device to or disconnect it from the plug socket while power is being applied.

LZ2323H5/LZ2324HJ

CHARACTERISTICS FOR LZ2323H5 (Drive method : Field accumulation)

A = +25 ˚C, Operating conditions : The typical values specified in "

RECOMMENDED OPERATING CONDITIONS

Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE

Standard output voltage V

O 150 mV 2

Photo response non-uniformity PRNU 15 % 3 Saturation output voltage V

SAT 650 mV 4

Dark output voltage V

DARK 0.3 3.0 mV 1, 5

Dark signal non-uniformity DSNU 0.6 2.0 mV 1, 6 Sensitivity R 400 550 mV 7 Smear ratio SMR –81 –76 dB 8 Image lag AI 1.0 % 9 Blooming suppression ratio ABL 100 10 Output transistor drain current I

OD 4.0 8.0 mA

Output impedance RO 350 $ Vector breakup 7.0 ˚, % 11 Line crawling 3.0 % 12 Luminance flicker 2.0 % 13

NOTES :

•VOFD should be adjusted to the minimum voltage such that ABL satisfy the specification, or to the value displayed on the device.

1. T

A = +60 ˚C

2. The average output voltage under uniform illumination. The standard exposure conditions are defined as when Vo is 150 mV.

3. The image area is divided into 10 x 10 segments under the standard exposure conditions. Each segment's voltage is the average output voltage of all pixels within the segment. PRNU is defined by (Vmax – Vmin)/Vo, where Vmax and Vmin are the maximum and minimum values of each segment's voltage respectively.

4. The output voltage measured at the carrier peak when the carrier signal reaches maximum.

5. The average output voltage under non-exposure conditions.

6. The image area is divided into 10 x 10 segments under non-exposure conditions. DSNU is defined by (Vdmax – Vdmin), where Vdmax and Vdmin are the maximum and minimum values of each segment's voltage respectively.

7. The average output voltage when a 1 000 lux light source with a 90% reflector is imaged by a lens of F4, f50 mm.

8. The sensor is exposed only in the central area of V/10 square with a lens at F4, where V is the vertical image size. SMR is defined by the ratio of the output voltage detected during the vertical blanking period to the maximum output voltage in the V/10 square.

9. The sensor is exposed at the exposure level corresponding to the standard conditions. AI is defined by the ratio of the output voltage measured at the 1st field during the non-exposure period to the standard output voltage.

10. The sensor is exposed only in the central area of V/10 square, where V is the vertical image size. ABL is defined by the ratio of the exposure at the standard conditions to the exposure at a point where blooming is observed.

11. Observed with a vector scope when the color bar chart is imaged under the standard exposure conditions.

12. The difference between the average output voltage of the (Mg + Ye), (G + Cy) line and that of the (Mg + Cy), (G + Ye) line under the standard exposure conditions.

13. The difference between the average output voltage of the odd field and that of the even field under the standard exposure conditions.

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