Sharp LZ2316AR, LZ2315A Datasheet

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1

DESCRIPTION

The LZ2315A/LZ2316AR are 1/3-type (6.0 mm)
solid-state image sensors that consist of PN photo­diodes and CCDs (charge-coupled devices) driven
by dual-power-supply. With approximately 270 000
pixels (542 horizontal x 492 vertical), the sensor
provides a stable high-resolution color (LZ2315A)/
B/W (LZ2316AR) normal or mirror image.

FEATURES

• Number of effective pixels : 512 (H) x 492 (V)

• Number of optical black pixels
– Horizontal : 2 front and 28 rear

• Pixel pitch : 9.6 µm (H) x 7.5 µm (V)

• Mg, G, Cy, and Ye complementary color filters
(For LZ2315A)

• Low fixed-pattern noise and lag

• No burn-in and no image distortion

• Blooming suppression structure

• Built-in output amplifier

• Built-in pulse mix circuit

• Built-in overflow drain voltage circuit and reset
gate voltage circuit

• Variable electronic shutter (1/60 to 1/10 000 s)

• Normal or mirror image output available from
common output pin

• Compatible with NTSC standard (LZ2315A)/
EIA standard (LZ2316AR)

• Package :
16-pin shrink-pitch WDIP [Ceramic]
(WDIP016-N-0500C)
Row space : 12.70 mm

PIN CONNECTIONS

PRECAUTIONS

• The exit pupil position of lens should be more
than 25 mm (LZ2315A)/20 mm (LZ2316AR) from
the top surface of the CCD.

• Refer to "PRECAUTIONS FOR CCD AREA

SENSORS" for details.

LZ2315A/LZ2316AR

LZ2315A/
LZ2316AR

Dual-power-supply (5 V/12 V) Operation

1/3-type CCD Area Sensors with 270 k Pixels

1ØRS

2RD

3GND

4OS

5OD

6Ø

H2B

7ØH2

8

16

15

14

13

12

11

10

9Ø

H1B

T1

OFD

Ø

TG

ØV2

ØV1

ØV4

ØV3

ØH1

16-PIN SHRINK-PITCH WDIP

TOP VIEW

(WDIP016-N-0500C)

Characteristics

TV standard

LZ2316AR

EIA standard (B/W)

LZ2315A

NTSC standard (Color)

Refer to each following specification.

COMPARISON TABLE

LZ2315A/LZ2316AR

2

PIN DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

(TA = +25 ˚C)

SYMBOL PIN NAME

RD Reset transistor drain
OD Output transistor drain
OS Output signals
Ø

RS Reset transistor clock

ØV1, ØV2, ØV3, ØV4 Vertical shift register clock
Ø

H1, ØH2, ØH1B, ØH2B Horizontal shift register clock

ØTG Transfer gate clock
OFD Overflow drain
GND Ground
T

1 Test pin

PARAMETER SYMBOL RATING UNIT

Output transistor drain voltage V

OD 0 to +15 V

Reset transistor drain voltage V

RD 0 to +15 V

Overflow drain voltage VOFD Internal output V
Test pin, T

1 VT1 0 to +15 V

Reset gate clock voltage VØRS Internal output V
Vertical shift register clock voltage V

ØV 0 to +7.5 V

Horizontal shift register clock voltage V

ØH –0.3 to +7.5 V

Transfer gate clock voltage VØTG –0.3 to +15 V
Storage temperature T

STG –40 to +85 ˚C

Ambient operating temperature TOPR –20 to +70 ˚C

2

1

NOTE

NOTES :

1. ØRS, OFD : Use the circuit parameter indicated in "SYSTEM CONFIGURATION
EXAMPLE", and do not connect to DC voltage directly. When not using electronic shutter,

connect OFD to GND through a 0.1 µF capacitor and a 1 M$ resistor.

2. Ø

V1-ØV4 : Input the clock through a 0.1 µF capacitor.

3. Ø

TG : Use the circuit parameter indicated in "SYSTEM CONFIGURATION EXAMPLE".

NOTES :

1. Do not connect to DC voltage directly. When OFD is connected to GND, connect VOD to GND. Overflow drain clock is
applied below 13 Vp-p.

2. Do not connect to DC voltage directly. When Ø

RS is connected to GND, connect VOD to GND. Reset gate clock is

applied below 8 Vp-p.

1

3

2

1

NOTE

3

LZ2315A/LZ2316AR

RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE

Ambient operating temperature T

OPR 25.0 ˚C

Output transistor drain voltage V

OD 12.0 12.5 13.0 V

Reset transistor drain voltage VRD VOD V

Ground GND 0.0 V
Test pin, T

1 VT1 VOD V

Horizontal shift register
clock

LOW level

V

ØH1L, VØH2L

VØH1BL, VØH2BL

–0.05 0.0 0.05 V

HIGH level

V

ØH1H, VØH2H

VØH1BH, VØH2BH

4.7 5.0 5.5 V

Reset gate clock p-p level V

ØRS 4.5

Vertical shift register clock frequency

f

ØV1, fØV2

fØV3, fØV4

15.73 kHz

Horizontal shift register clock frequency

f

ØH1, fØH2

fØH1B, fØH2B

9.53 MHz

Reset gate clock frequency f

ØRS 9.53 MHz

1V13.012.512.0V

ØOFDOverflow drain clock

V0.050.0–0.05V

ØTGL

Transfer gate clock

LOW level
HIGH level V

ØTGH 12.0 12.5 13.0 V

p-p level

Vertical shift register
clock

V

ØV1, VØV2

VØV3, VØV4

4.7 5.0 5.5 V 1

p-p level

5.0 5.5 V 1

2ns18.010.05.0tw

1, tw2Horizontal shift register clock phase

NOTES :

1. Use the circuit parameter indicated in "SYSTEM CONFIGURATION EXAMPLE", and do not connect to DC voltage directly.

2.

* To apply power, first connect GND and then turn on V

OD and then turn on other powers and pulses. Do not connect the

device to or disconnect it from the plug socket while power is being applied.

ØH1, ØH2

ØH1B, ØH2B : Normal image output mode
Ø

H1B, ØH2B : Mirror image output mode

tw1 tw2

LZ2315A/LZ2316AR

4

CHARACTERISTICS FOR LZ2315A (Drive method : Field accumulation)

(T

A = +25 ˚C, Operating conditions : The typical values specified in "

RECOMMENDED OPERATING CONDITIONS

".

Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE

Standard output voltage V

O 150 mV 2

Photo response non-uniformity PRNU 15 % 3
Saturation output voltage V

SAT 650 mV 4

Dark output voltage V

DARK 0.5 mV 1, 5

Dark signal non-uniformity DSNU 0.5 mV 1, 6
Sensitivity R 420 600 mV 7
Smear ratio SMR –110 –90 dB 8
Image lag AI 1.0 % 9
Blooming suppression ratio ABL 1 000 10
Output transistor drain current I

OD 4.0 8.0 mA

Output impedance RO 400 $
Vector breakup 10.0 ˚, % 11
Line crawling 3.0 % 12
Luminance flicker 2.0 % 13

NOTES :

• Within the recommended operating conditions of VOD,
V

OFD of the internal output satisfies with ABL larger than

1 000 times exposure of the standard exposure conditions,
and V

SAT larger than 650 mV.

1. T

A = +60 ˚C

2. The average output voltage under uniform illumination.
The standard exposure conditions are defined as when
Vo is 150 mV.

3. The image area is divided into 10 x 10 segments under
the standard exposure conditions. Each segment's
voltage is the average output voltage of all pixels within
the segment. PRNU is defined by (Vmax – Vmin)/Vo,
where Vmax and Vmin are the maximum and minimum
values of each segment's voltage respectively.

4. The image area is divided into 10 x 10 segments. Each
segment's voltage is the average output voltage of all
pixels within the segment. V

SAT is the minimum

segment's voltage under 10 times exposure of the
standard exposure conditions.

5. The average output voltage under non-exposure
conditions.

6. The image area is divided into 10 x 10 segments under
non-exposure conditions. DSNU is defined by (Vdmax –
Vdmin), where Vdmax and Vdmin are the maximum and
minimum values of each segment's voltage respectively.

7. The average output voltage when a 1 000 lux light
source with a 90% reflector is imaged by a lens of F4,
f50 mm.

8. The sensor is exposed only in the central area of V/10
square with a lens at F4, where V is the vertical image
size. SMR is defined by the ratio of the output voltage
detected during the vertical blanking period to the
maximum output voltage in the V/10 square.

9. The sensor is exposed at the exposure level
corresponding to the standard conditions. AI is defined
by the ratio of the output voltage measured at the 1st
field during the non-exposure period to the standard
output voltage.

10. The sensor is exposed only in the central area of V/10
square, where V is the vertical image size. ABL is
defined by the ratio of the exposure at the standard
conditions to the exposure at a point where blooming is
observed.

11. Observed with a vector scope when the color bar chart
is imaged under the standard exposure conditions.

12. The difference between the average output voltage of the
(Mg + Ye), (G + Cy) line and that of the (Mg + Cy), (G +
Ye) line under the standard exposure conditions.

13. The difference between the average output voltage of
the odd field and that of the even field under the
standard exposure conditions.

5

LZ2315A/LZ2316AR

CHARACTERISTICS FOR LZ2316AR (Drive method : Field accumulation)

(T

A = +25 ˚C, Operating conditions : The typical values specified in "

RECOMMENDED OPERATING CONDITIONS

".

Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE

Standard output voltage V

O 150 mV 2

Photo response non-uniformity PRNU 15 % 3
Saturation output voltage V

SAT 650 mV 4

Dark output voltage V

DARK 0.5 mV 1, 5

Dark signal non-uniformity DSNU 0.5 mV 1, 6
Sensitivity R 700 1 000 mV 7
Smear ratio SMR –110 –90 dB 8
Image lag AI 1.0 % 9
Blooming suppression ratio ABL 1 000 10
Output transistor drain current I

OD 4.0 8.0 mA

Output impedance RO 400 $

NOTES :

• Within the recommended operating conditions of VOD,
V

OFD of the internal output satisfies with ABL larger than

1 000 times exposure of the standard exposure conditions,
and V

SAT larger than 650 mV.

1. T

A = +60 ˚C

2. The average output voltage under uniform illumination.
The standard exposure conditions are defined as when
Vo is 150 mV.

3. The image area is divided into 10 x 10 segments under
the standard exposure conditions. Each segment's
voltage is the average output voltage of all pixels within
the segment. PRNU is defined by (Vmax – Vmin)/Vo,
where Vmax and Vmin are the maximum and minimum
values of each segment's voltage respectively.

4. The image area is divided into 10 x 10 segments. Each
segment's voltage is the average output voltage of all
pixels within the segment. V

SAT is the minimum

segment's voltage under 10 times exposure of the
standard exposure conditions.

5. The average output voltage under non-exposure
conditions.

6. The image area is divided into 10 x 10 segments under
non-exposure conditions. DSNU is defined by (Vdmax –
Vdmin), where Vdmax and Vdmin are the maximum and
minimum values of each segment's voltage respectively.

7. The average output voltage when a 1000 lux light
source with a 90% reflector is imaged by a lens of F4,
f50 mm.

8. The sensor is exposed only in the central area of V/10
square with a lens at F4, where V is the vertical image
size. SMR is defined by the ratio of the output voltage
detected during the vertical blanking period to the
maximum output voltage in the V/10 square.

9. The sensor is exposed at the exposure level
corresponding to the standard conditions. AI is defined
by the ratio of the output voltage measured at the 1st
field during the non-exposure period to the standard
output voltage.

10. The sensor is exposed only in the central area of V/10
square, where V is the vertical image size. ABL is
defined by the ratio of the exposure at the standard
conditions to the exposure at a point where blooming is
observed.