Sharp LT262A Datasheet

Hall IC
LT262A
Features
¡ Operation by small magnet due to high sensitivity
Operating point<10mT
¡Combining a GaAs Hall device and an IC in a compact
package (2.9X1.5X1.1mm)
¡Wide operation temperature range obtained by GaAs Hall
device (-20 to +125˚C)
¡Long life time due to noncontact-type
Applications
¡FDD ¡HDD ¡Water meter ¡Car stereo ¡Microswitch, etc.
Absolute Maximum Ratings
Supply voltage
Parameter
Output voltage Output current Power dissipation Operating temperature Storage temperature
Soldering temperature
*1 Soldering time : within 10 seconds
*1
Symbol
V
CC
V
OUT
I
O
P
D
T
opr
T
stg
T
sol
(Ta=25˚C)
Rating
8 8 5
100
-20 to +125
-55 to +150 260
Unit
V V
mA
mW
˚C ˚C ˚C
LT262A
GaAs Hall IC for Noncontact Switch
(Alternating magnetic field-type*)
Outline Dimensions
2.7±0.3
0.40.4
1.9
2.9±0.2
Hall device center line X : +0.05±0.23mm against package center Y : -0.05±0.1mm against package lead center between No.2 and No.3 terminals Z : 0.81±0.15mm from package surface
+0.10
-0.06
0.16
*No.3 terminal and the section of leads (both sides of package in X direction) are connected with the terminal of internal IC. Be careful in connecting other circuits.
Y
1
2
1.5±0.2
0.6 0.6
As for dimensions of tape-packaged products, refer to page 44 .
Operating Explanation
<Alternating magnetic field-type>
Output voltage
(Unit : Fmm)
0.6
4
0.850.95
3
X
0.4
4-R0.2
Terminal connections
0.30.8
Hall
device
+0.2
-0.1
1.1
(0to0.15)
SZ
REG
+
H
-
1 : V
CC
2 : V
OUT
3 : Don't use. 4 : GND
2.9±0.2
BRP 0BOP +B
Magnetic flux density
Electrical Characteristics (T
Parameter Operating magnetic flux density Hysteresis breadth
Operating voltage Supply current Low level output voltage Output leakage current Operating point temperature drift
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device spcification sheets before using any SHARP device.
Symbol
B
OP
B
RP
B
H
V
CC
I
CC
V
OL
I
OH
B
OP
Condition
V
CC
=5V VOO=5V RL=10k
CC
=5V, B=<-10mT
V I
O
=4mA, B>=10mT
V
CC
=5V, B=<-10mT, VOO=5V V
CC
=5V, Ta=-20˚C to +80˚C
MIN.
-
-10
-
3.5
-
-
-
-6
TYP.
-
-
-
-
-
-
-
-
MAX.
10
­5
6.5
10.5
0.4 10
6
a
=25˚C)
Unit
mT mT mT
V
mA
V
µA
mT
Hall IC
LT262A
Fig. 1 Operating Magnetic Flux Density
vs. Supply Voltage
Ta=25˚C
12
(mT)
8
4
B
0
-4
OP
B
RP
-8
-12
Operating magnetic flux density B
6.05.04.0
Supply voltage VCC (V)
Fig. 3 Supply Current vs. Supply Voltage
10
B=<-10mT
a
=25˚C
T
8
(mA)
CC
6
Fig. 2 Operating Magnetic Flux Density vs.
Ambient Temperature
VCC=5V
12
(mT)
8
4
B
0
-4
OP
B
RP
-8
-12
Operating magnetic flux density B
-40 12040 800 Ambient temperature Ta (˚C)
Fig. 4 Supply Current vs. Ambient
Temperature
10
VCC=5V
B=<-10mT
8
(mA)
CC
6
4
Supply current I
2
0
6.05.04.0
Supply voltage VCC (V)
Fig. 5 Low Level Output Voltage vs.
Output Current
0.5 VCC=5V
B>=10mT
(V)
0.4
a
=25˚C
T
OL
0.3
0.2
0.1
Low level output voltage V
0
04123 5
Output current IO (mA)
4
Supply current I
2
0
-40 12004080 Ambient temperature Ta (˚C)
Fig. 6 Low Level Output Voltage vs.
Ambient Temperature
0.5 VCC=5V
O
=4mA
I
(V)
0.4
B>=10mT
OL
0.3
0.2
0.1
Low level output voltage V
0
Ambient temperature Ta (˚C)
80-40 0 40 120
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