Sharp LT1W92A Datasheet

Full Color Leadless Chip LED Device
1.1
0.4
0.7
3.0
2.6
3.0
2.6
Colorless transparency
Black print
Recommended PWB pattern for soldering
Black print
0.4
(0.9)
(0.9)
(0.9)1.2
1.21.2
0.5
0.5
Soldering area
Device center
1.21.2
0.5
0.5
1.Plating area Resist
2.Pin connections
3.Unspecified tolerance:±0.2
1 Anode(Blue) 2 Anode(Yellow-green) 3 Cathode 4 Anode(Red)
4 3
1 2
1 2
34
80
40
20
60
-20˚ +20˚ +40˚
+60˚
+80˚
-40˚
-60˚
-80˚
80
100
100
40
20
60
-20˚ +20˚ +40˚
+60˚
+80˚
-40˚
-60˚
-80˚
Blue
Red
Yellow-green
X
X
[Anode] [Cathode]
Relative luminous intensity(%)
Relative luminous intensity(%)
( )
TYP MAX
Model No.
Lens
type
Forward voltage
VF(V)
λp(nm)
TYP
I
V(mcd)
TYP
I
F
(mA)
IF
(mA)
IF
(mA)
(MH
Z)
V
R
(V)
I
R(µA)
MAX
C
t(pF)
TYP
λ(nm)
TYP
Peak emission wavelength
Luminous intensity
Spectrum radiation bandwidth
Reverse current
Page for
characteristics
diagrams
Terminal capacitance
(Ta=25˚C)
Radiation
color
LT1W92A
4.4
2.1
2.0
5.6
2.8
2.8
430 565 635
20 20 20
8.1
32.0
16.0
20 20 20
70 30 35
20 20 20
10 10 10
4 4 4
50 35 20
1 1 1
----
----
----
Colorless
transparency
Blue Yellow-green Red
LT1W92A
LT1W92A
3030 Size, 1.1mm Thickness, MID* Type Full Color Leadless Chip LED Device
Outline Dimensions
*MID:Molded Interconnection Device
(Unit : mm) (Ta=25˚C)
Radiation Diagram
Absolute Maximum Ratings
Power dissipation
Model No.
LT1W92A
*1 The value is specified under the condition that either color is lightened separately. When all diodes are lightened simultaneously, the power dissipation of each diode should be less than 30% of the value specified in this table. *2 Duty ratio=1/10, Pulse width=0.1ms *3 For 3s or less at the temperature of hand soldering. Temperature of reflow soldering is shown on the below page.
Electro-optical Characteristics
(Notice) ¡ (Internet) ¡Data for sharp's optoelectronic/power device is provided for internet.(Address http://www.sharp.co.jp/ecg/)
Radiation color
Blue Yellow-green Red
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Radiation material
GaN on SiC GaP GaAsP on GaP
*1
P
(mW)
200
84 84
Forward current
IF
(mA)
30 30 30
Peak forward current
IFM
(mA)
100
50 50
Derating factor
*2
(mA/˚C)
DC Pulse
0.67
0.40
0.40
1.33
0.67
0.67
Reverse voltage
VR
(V)
5 5 5
Operating temperature
Storage temperature
Topr
(˚C)
-30 to +85
-30 to +85
-40 to +100
-40 to +100
-30 to +85 -40 to +100
Tstg
(˚C)
Soldering temperature
Tsol
(˚C)
260 260 260
*3
107
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